Abstract:A lattice temperature model is derived for oxide-confined vertical cavity surface emitting lasers (VCSELs) based on carrier transport and the conservation of energy. Peltier heat is caused by the bandedge and quasi-Fermi level discontinuities at a heterojunction. However, considering the device size, Peltier heat needs to be distributed and is not just generated at the interface, otherwise, an anomolous spike in temperature will occur. We have developed a novel treatment to model the Peltier heat at a heterojunction by use of a Monte Carlo simulation. Peltier heat is found to be a major heat contributor, and it results in a rapid and high temperature rise in the separate confinement heterostructure (SCH) region of the laser diode. We have also shown that the carrier thermal conductivities for materials with high mobilities must be included at high carrier densities because they contribute to additional spreading of the thermal energy. Subsequently, this lattice temperature model is coupled self-consistently to electronic and optical solvers to form a complete simulator for VCSELs. Self-heating causes a fast temperature rise when the VCSEL is operated under continuous wave conditions, causing resonant wavelength changes and an eventual thermal rollover. The resonant wavelength shift has been shown to be caused mainly by the heating of the distributed Bragg reflectors even though the peak temperature occurs within the SCH region. Possible physical factors causing the thermal rollover have also been examined with our complete simulator. The Auger recombination process is found to be one of the main factors causing the thermal rollover in 980 nm oxide-confined VCSELs while the photon lifetime is a factor in determining the position of the thermal rollover. We have also achieved a very good match between our simulated results and experimental data.

A Large-Signal SPICE Model for VCSEL Based on Piece-Wise Linear RLC Elements

Lattice Temperature Model and Temperature Effects in Oxide-Confined VCSEL’s

The Electrical Turn-on Characteristics of Vertical-Cavity Surface-Emitting Lasers

Wideband lumped element model for on-chip (a)symmetrical coupled interconnects on lossy silicon substrate

Effects of the Spatial Nonuniformity of Optical Transverse Modes on the Modulation Response of Vertical-Cavity Surface-Emitting Lasers

Implementation of VCSEL'S Equivalent Circuit Model in SPICE

Resonant-wavelength Control and Optical-Confinement Analysis for Graded SCH VCSELs Using a Self-Consistent Effective-Index Method

Numerical Investigation of Self-Heating Effects of Oxide-Confined Vertical-Cavity Surface-Emitting Lasers

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Simulating the Spiking Response of VCSEL-based Optical Spiking Neuron

An Electrooptothermal-Coupled Circuit-Level Model for VCSELs under Pulsed Condition

Full RLGC Model Extraction of Through Silicon Via (TSV) with Charge Distribution Effects

Large signal model of quantum-well lasers for spice

Equivalent circuit modeling of the dynamic operation of ultra-high speed multi-mode VCSELs

Compact Wideband Equivalent-Circuit Model for Electrical Modeling of Through-Silicon Via

Modeling full PCSELs and VCSELs using modified rigorous coupled-wave analysis

A SPICE-compatible Full-Wave Equivalent Circuit Model for Printed Circuit Structure Analysis

Signal Integrity Analysis of Through-Silicon Via Based 3D Integrated Circuit

A New Method for Extending Rate Equation Based VCSEL Model with Multimode Spectral Characteristic

Development of a RF large signal MOSFET model, based on an equivalent circuit, and comparison with the BSIM3v3 compact model

A Wideband Scalable and SPICE-Compatible Model for On-Chip Interconnects Up to 110 GHz