Abstract:This paper presents a low-noise amplifier (LNA) with superior linearity for ultra-wideband (UWB) purposes. Linearity is a significant parameter for 5G receivers because the 5G new radio bands overlap with the UWB frequency band. In the proposed design, the Complementary Derivation Superposition (CDS) and the Shunt-Feedback Common Source techniques were combined using a novel circuit topology. The active and passive feedback captured the nonlinear signal, and the auxiliary PMOS transistor helped to realize low noise figure (NF), high gain, and highly linearity. The inductors at the gate and drain, in cooperation with the LC filter, were selected to perform the Input Impedance Matching (IIM) over the entire UWB frequency band. Finally, the novel structure was designed and verified by post-layout simulations using the 65-nm CMOS technology. The results obtained from the Post-Layout simulations in the whole of UWB band (from 3.1 to 10.6 GHz) are as follows: the power gain and NF are 12.4 ± 0.3 dB and 3.6 ± 0.3 dB, respectively. The S11 parameter is better than − 10 dB in the desired band. The circuit consumes 10.56 mW under 1.2 V supply voltage. The maximum and average of third-order Input Intercept Point (IIP3) are 17.93 dBm and 6.22 dBm, respectively. The layout size of the proposed LNA is 0.827 mm2. In addition, a compressive Process-Voltage-Temperature (PVT) analysis is presented, that proves the circuit robustness against process, voltage and temperature variations.

Innovative techniques for achieving flat response in a dual-resonance ultra-wideband low-noise amplifier

Analysis and Design of Ultra-Wideband Low-Noise Amplifier with Input/Output Bandwidth Optimization and Single-Ended/Differential-Input Reconfigurability.

Analysis and Design of Wideband Low Noise Amplifier with Digital Control

Analysis And Design Of Inductorless Wideband Low-Noise Amplifier With Noise Cancellation Technique

A 11.2 Mw 48–62 GHz Low Noise Amplifier in 65 Nm CMOS Technology

A 6.5-12 GHz Balanced Variable Gain Low-Noise Amplifier with Frequency-Selective Non-Foster Gain Equalization Technique

A 6.512-GHz Balanced Variable-Gain Low-Noise Amplifier With Frequency-Selective Gain Equalization Technique

0.9–10GHz low noise amplifier with capacitive cross coupling

A Compact 2.1–39 GHz Self-Biased Low-Noise Amplifier in 65 Nm CMOS Technology

A 0.08&#x2013;3ghz High Gain UWB LNA with Improved Flatness

A high linearity UWB LNA using a novel linearizer feedback, based on complementary derivation superposition techniques

Design of a Flat-Gain Low-Noise Amplifier for Tiled Ultra-Wideband Receiver Applications

Simulation design of a low-noise amplifier for 3.1-10.6 GHz ultra-wideband wireless receivers

Design of Ultra-Wideband LNA with 3.6 ± 0.4 Db NF and 15.9 ± 1.1 Db Gain

A Novel CMOS Low-Noise Amplifier Design for 3.1- to 10.6-Ghz Ultra-Wide-band Wireless Receivers

A fully-integrated low-power 3.1-10.6GHz UWB LNA in 0.18μm CMOS

Low Noise Amplifier Design and Performance Analysis of RF Front-End for Narrow Band Receivers

A 140-Gbps 1-to-21-ghz Ultra-Wideband LNA Achieving 1.95-to-3-db NF Using Gm-Assisted-Feedback Noise Suppression Technique in 40nm Bulk CMOS

3-10 GHz Ultra-Wideband LNA with Continuously Variable Gain for Wireless Communication

Low Noise Amplifier Architecture Analysis for OFDM-UWB System in 0.18&#x003bc;m CMOS

Low Power 0.18µm CMOS Ultra Wideband Inductor-Less LNA Design for UWB Receiver