Abstract:Two inductorless low-power differential low-noise amplifiers (LNAs) are designed for multiband wireless communication applications. Both LNAs are based on the combination of common-gate (CG) and shunt feedback topologies. In the first LNA, the cross-coupled push-pull structure with separated bias for nMOS and pMOS CG transistors is utilized to realize gm enhancement, partial noise cancellation, and bandwidth extension. In the second LNA, cascode transistors are utilized on the basis of the first topology to alleviate the Miller effect and to construct current steering structures, so as to extend the bandwidth. For both LNAs, in-depth analysis is given, and methods for sizing and biasing optimization under power constraint are proposed to obtain good overall performance tradeoffs while maintaining low-power consumption. The prototypes are implemented in 65-nm low-power CMOS technology. The first LNA achieves a gain of 21.2 dB, a noise figure (NF) of 3-3.5 dB over the 3-dB bandwidth of 200 MHz to 2.7 GHz and an IIP3 of -2 dBm at 1.1 GHz. It consumes 0.96 mW from 1.2-V supply. The second LNA exhibits a gain of 21.2 dB, an NF of 2.8-4 dB over the 3-dB bandwidth of 100 MHz to 4.3 GHz. It consumes 2 mW from 1.2-V supply. Each LNA occupies an area of 0.05 mm(2).

Low Power 0.18µm CMOS Ultra Wideband Inductor-Less LNA Design for UWB Receiver

Low Power 0.18&#x00b5;m CMOS Ultra Wideband Inductor-Less LNA Design for UWB Receiver

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Analysis and Design of Ultra-Wideband Low-Noise Amplifier with Input/Output Bandwidth Optimization and Single-Ended/Differential-Input Reconfigurability.

Analysis And Design Of Inductorless Wideband Low-Noise Amplifier With Noise Cancellation Technique

A fully-integrated low-power 3.1-10.6GHz UWB LNA in 0.18μm CMOS

Ultralow Power E-Band Low-Noise Amplifier with Three-Stacked Current-Sharing Amplification Stages in 28-Nm CMOS

0.9–10GHz low noise amplifier with capacitive cross coupling

An Inductor-Less Highly Linear LNA with Noise Cancelling and Current Reusing for 3–5 GHz Low-Power UWB Receivers

3-10 GHz self-biased resistive-feedback lna with inductive source degeneration

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A Novel CMOS Low-Noise Amplifier Design for 3.1- to 10.6-Ghz Ultra-Wide-band Wireless Receivers

A 2.4 mW, 11.7±0.4dB, 3 to 5 GHz wide-band LNA for super-regenerative IR-UWB receiver

A1V 6mW inductorless wideband LNA in 0.13μm RF CMOS

A 0.18 Mu M Cmos Ultra-Wideband Low-Noise Amplifier With High Iip3

A Wideband Inductorless LNA with Local Feedback and Noise Cancelling for Low-Power Low-Voltage Applications

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A 0.03-3Ghz Inductorless Wideband Low Noise Amplifier in 65nm CMOS

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A 22-40.5 GHz UWB LNA Design in 0.15um GaAs.

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