A 0.18 Mu M Cmos Ultra-Wideband Low-Noise Amplifier With High Iip3

Teemu Peltonen,Meigen Shen,Tero Koivisto,Xinzhong Duo,Esa Tjukanoff,Li-Rong Zheng,Hannu Tenhunen
DOI: https://doi.org/10.1109/hdp.2005.251445
2005-01-01
Abstract:In this paper an ultra-wideband low-noise amplifier (LNA) for the frequency range of 3.1 - 9.4 GHz using 0.18 mu m CMOS RF process is introduced. Single-ended single stage LNA structure utilises an input LC-ladder, cascode transistor configuration and LRC-feedback to realise an ultra broad bandwidth response. In operating frequency range noise figure (NF) of 3.1 dB and gain of 10.6 dB were achieved along with high linearity (IIP3) even upto 10.9 dBm at 3.1 GHz. With the bias network, the LNA had a total power consumption of 31 mW from 1.8 V supply.
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