Abstract:Abstract Two-dimensional (2D) structures composed of atomically thin materials with high carrier mobility have been studied as candidates for future transistors. However, due to the unavailability of suitable high-quality dielectrics, 2D field-effect transistors (FETs) cannot attain the full theoretical potential and advantages despite their superior physical and electrical properties. Herein, we demonstrate the fabrication of atomically thin single-crystalline Al 2 O 3 (c-Al 2 O 3 ) as the high-quality top-gate dielectric layer in 2D FETs. By using the epitaxial lift-off and intercalative oxidation techniques, a stable, stoichiometric, and atomically thin c-Al 2 O 3 layer with a thickness of 1.25 nm is formed on the single-crystalline Al surface. Owing to the favorable crystalline structure and well-defined interfaces, the gate leakage current, interface state density, and dielectric strength meet the International Roadmap for Devices and Systems (IRDS) requirements for low-power devices. By means of a one-step transfer process of the source, drain, dielectric materials, and gate onto molybdenum disulfide (MoS 2 ), the self-aligned top-gate MoS 2 FET devices are fabricated. Since direct lithography or high-energy deposition can be avoided during fabrication, the MoS 2 FETs deliver outstanding performance including a steep subthreshold swing of 61 mV/dec, extremely high on/off current ratio of 10 8 , and negligible hysteresis of 10 mV. In addition, a batch of 100 FETs with good uniformity of electronical characteristics has been fabricated. The innovative technique and materials demonstrate the possibility of producing high-quality single-crystalline oxides such as ferroelectric oxides, wide-bandgap oxides, and magnetic oxides suitable for integration into fully scalable advanced 2D FETs including negative capacitance transistors and spin transistors.

Magnesium niobate as a high- κ gate dielectric for two-dimensional electronics

A native oxide high-κ gate dielectric for two-dimensional electronics

A native oxide high-kappa gate dielectric for two-dimensional electronics

Vertically grown ultrathin Bi 2 SiO 5 as high- κ single-crystalline gate dielectric

Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices

Two-dimensional-materials-based transistors using hexagonal boron nitride dielectrics and metal gate electrodes with high cohesive energy

High- κ perovskite membranes as insulators for two-dimensional transistors

Two-dimensional perovskite oxide as a photoactive high- κ gate dielectric

Single-crystalline metal-oxide dielectrics for top-gate 2D transistors

High- κ monocrystalline dielectrics for low-power two-dimensional electronics

Single-crystalline High-κ GdOCl Dielectric for Two-Dimensional Field-Effect Transistors

Single-crystalline metal oxides as dielectrics for top-gate two-dimensional transistors

High Quality Ultrathin Gate Dielectrics Prepared by In-Situ RTP

Single-crystalline van der Waals layered dielectric with high dielectric constant

Wafer-scale high-κ dielectrics for two-dimensional circuits via van der Waals integration

Growth and performance of yttrium oxide as an ideal high-kappa gate dielectric for carbon-based electronics.

Superionic Fluoride Gate Dielectrics with Low Diffusion Barrier for Two-Dimensional Electronics

Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices

Janus Electronic Devices with Ultrathin High-κ Gate Dielectric Directly Integrated on 1T'-MoTe 2

Growth and Performance of Yttrium Oxide as an Ideal High-κ Gate Dielectric for Carbon-Based Electronics

Few-Layered MnAl2S4 Dielectrics for High-Performance van der Waals Stacked Transistors