Abstract:Ionic gating is a powerful technique to realize field-effect transistors (FETs) enabling experiments not possible otherwise. So far, ionic gating has relied on the use of top electrolyte gates, which pose experimental constraints and make device fabrication complex. Promising results obtained recently in FETs based on solid-state electrolytes remain plagued by spurious phenomena of unknown origin, preventing proper transistor operation, and causing limited control and reproducibility. Here, a class of solid-state electrolytes for gating (Lithium-ion conducting glass-ceramics, LICGCs) is explored, the processes responsible for the spurious phenomena and irreproducible behavior are identified, and properly functioning transistors exhibiting high density ambipolar operation with gate capacitance of ≈ 20 - 50 µ F c m - 2 \[20{\bm{ - }}50\;\mu F c{m^{{\bm{ - }}2}}\] (depending on the polarity of the accumulated charges) are demonstrated. Using 2D semiconducting transition-metal dichalcogenides, the ability to implement ionic-gate spectroscopy to determine the semiconducting bandgap, and to accumulate electron densities above 1014 cm-2 are demostrated, resulting in gate-induced superconductivity in MoS2 multilayers. As LICGCs are implemented in a back-gate configuration, they leave the surface of the material exposed, enabling the use of surface-sensitive techniques (such as scanning tunneling microscopy and photoemission spectroscopy) impossible so far in ionic-gated devices. They also allow double ionic gated devices providing independent control of charge density and electric field.

Superionic Fluoride Gate Dielectrics with Low Diffusion Barrier for Two-Dimensional Electronics

Superionic Fluoride Gate Dielectrics with Low Diffusion Barrier for Advanced Electronics

Analysis of the Electrical Properties and Current Transportation Mechanism of a Metal Oxide Semiconductor (MOS) Capacitor Based on HfGdO Gate Dielectrics

Gate Induced Metal-Insulator Transition in MoS2 by Solid Superionic Conductor LaF3.

A native oxide high-kappa gate dielectric for two-dimensional electronics

Two-dimensional negative capacitance transistor with polyvinylidene fluoride-based ferroelectric polymer gating

Full Control of Solid-State Electrolytes for Electrostatic Gating

High- κ monocrystalline dielectrics for low-power two-dimensional electronics

Interface Chemistry Evolution and Leakage Current Conduction Mechanism Determination in Rare-Earth-Doped Hf-Based Gate Dielectrics

Intrinsically Flexible All-Carbon-nanotube Electronics Enabled by a Hybrid Organic–inorganic Gate Dielectric

Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors

2D Negative Capacitance Field-Effect Transistor with Organic Ferroelectrics

Electrostatic and electrochemical charging mechanisms for electric-double-layer gating media based on a crystalline LaF 3 solid electrolyte

Direct Integration of Ferroelectric Hafnium Zirconium Oxide as Top-Gate High−κ Dielectrics for Two-Dimensional Transistors

Electrostatic and Electrochemical Charging Mechanisms for Electric-Double-layer Gating Media Based on a Crystalline LaF3 Solid Electrolyte

Calcium fluoride as high-k dielectric for 2D electronics

Single-crystalline High-κ GdOCl Dielectric for Two-Dimensional Field-Effect Transistors

Giant Tunability of the Two-Dimensional Electron Gas at the Interface of Γ-Al2o3/srtio3

Wafer-scale high-κ dielectrics for two-dimensional circuits via van der Waals integration

Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices

Research Progress of High Dielectric Constant Zirconia-Based Materials for Gate Dielectric Application