Abstract:Abstract Two-dimensional (2D) structures composed of atomically thin materials with high carrier mobility have been studied as candidates for future transistors. However, due to the unavailability of suitable high-quality dielectrics, 2D field-effect transistors (FETs) cannot attain the full theoretical potential and advantages despite their superior physical and electrical properties. Herein, we demonstrate the fabrication of atomically thin single-crystalline Al 2 O 3 (c-Al 2 O 3 ) as the high-quality top-gate dielectric layer in 2D FETs. By using the epitaxial lift-off and intercalative oxidation techniques, a stable, stoichiometric, and atomically thin c-Al 2 O 3 layer with a thickness of 1.25 nm is formed on the single-crystalline Al surface. Owing to the favorable crystalline structure and well-defined interfaces, the gate leakage current, interface state density, and dielectric strength meet the International Roadmap for Devices and Systems (IRDS) requirements for low-power devices. By means of a one-step transfer process of the source, drain, dielectric materials, and gate onto molybdenum disulfide (MoS 2 ), the self-aligned top-gate MoS 2 FET devices are fabricated. Since direct lithography or high-energy deposition can be avoided during fabrication, the MoS 2 FETs deliver outstanding performance including a steep subthreshold swing of 61 mV/dec, extremely high on/off current ratio of 10 8 , and negligible hysteresis of 10 mV. In addition, a batch of 100 FETs with good uniformity of electronical characteristics has been fabricated. The innovative technique and materials demonstrate the possibility of producing high-quality single-crystalline oxides such as ferroelectric oxides, wide-bandgap oxides, and magnetic oxides suitable for integration into fully scalable advanced 2D FETs including negative capacitance transistors and spin transistors.

Two-dimensional-materials-based transistors using hexagonal boron nitride dielectrics and metal gate electrodes with high cohesive energy

Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices

Hysteresis‐Free Hexagonal Boron Nitride Encapsulated 2D Semiconductor Transistors, NMOS and CMOS Inverters

A native oxide high-kappa gate dielectric for two-dimensional electronics

Effective Suppression of MIS Interface Defects Using Boron Nitride Toward High-Performance Ta-Doped-β-Ga2O3 MISFETs.

Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional BiN

Ultimate dielectric scaling of 2D transistors via van der Waals metal integration

Single-crystalline metal-oxide dielectrics for top-gate 2D transistors

Free-Standing 2D Hexagonal Aluminum Nitride Dielectric Crystals for High-Performance Organic Field-Effect Transistors

Few-Layered MnAl2S4 Dielectrics for High-Performance van der Waals Stacked Transistors

A native oxide high-κ gate dielectric for two-dimensional electronics

Single-crystalline metal oxides as dielectrics for top-gate two-dimensional transistors

2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures

Direct Integration of Ferroelectric Hafnium Zirconium Oxide as Top-Gate High−κ Dielectrics for Two-Dimensional Transistors

Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates.

Doping, Contact and Interface Engineering of Two-Dimensional Layered Transition Metal Dichalcogenides Transistors

The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials

Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices

A Single‐Crystal Antimony Trioxide Dielectric for 2D Field‐Effect Transistors

Transistors based on two-dimensional materials for future integrated circuits

Hybrid single-layer/bulk tungsten diselenide transistors by lithographic encoding of material thickness in chemical vapor deposition