Abstract:The development of silicon-based high-power devices, e.g. IGBTs, has reached its application limits in terms of high-temperature and high-frequency harsh operating conditions. Wide bandgap (WBG) power devices (such as silicon carbide, SiC) are currently one of the most promising power devices for replacement. Due to their intrinsic bandgap, SiC high-power devices have proven their superior performance in high-frequency and high-temperature working scenarios. With the increasing demand of high-power semiconductor devices in industries such as new-energy vehicles, high-speed railway systems, and aerospace, the conditions of SiC power semiconductor devices have become more and more complex, which brings challenges to electronic packaging technology. Due to thermal management and reliability requirements for SiC power devices, customized advanced heat dissipation structures, and high-temperature soldering materials have been introduced in power device packaging technology. The reliability verification of these new electronic packaging technologies is often time-consuming and labor-intensive, so designers hope to obtain results consistent with actual experimental data through the utilization of computer-aided design methods, such as finite-element analysis (FEA), which will greatly reduce the number of iterations of physical prototypes and the development time. This article reviewed and discussed the application of FEA in the latest packaging technology, including the extraction of the thermal resistance network of the SiC power module, the thermal simulation of the novel efficient cooling structure, the thermo-mechanical analysis of the high-temperature packaging material, and the long-term reliability FEA of the SiC power devices.

Substrate Embedded Power Electronics Packaging for Silicon Carbide mosfets

Fan-Out Panel-Level PCB-Embedded SiC Power MOSFETs Packaging

A Solution to Press-Pack Packaging of SiC MOSFETS

Design of Low Parasitic Inductance SiC MOSFETs Halfbridge Power Modules

Design and evaluation of press-pack SiC MOSFET

Analysis of Novel Packaging Techniques for High Power Electronics in SiC

A Novel SiC MOSFET Module for High-power Soft-switching Converter

Liquid Metal Fluidic Connection and Floating Die Structure for Ultra Low Thermomechanical Stress of SiC Power Electronics Packaging

Analysis of A Low-Inductance Packaging Layout for Full-Sic Power Module Embedding Split Damping

A Double-Side Cooled SiC MOSFET Power Module With Sintered-Silver Interposers: I-Design, Simulation, Fabrication, and Performance Characterization

Compact-Interleaved Packaging Method of Power Module With Dynamic Characterization of 4H-SiC MOSFET and Development of Power Electronic Converter at Extremely High Junction Temperature

A Highly Integrated Multichip SiC MOSFET Power Module With Optimized Electrical and Thermal Performances

Investigation of Low-Profile, High-Performance 62-mm SiC Power Module Package

Die Current Balancing of a Press-Pack SiC MOSFET

Novel Polymer Substrate-Based 1.2 Kv/40 A Double-Sided Intelligent Power Module

A SiC Double-Sided Stacked Wire-Bondless Power Module for High-Frequency Power Electronic Applications

Flexible Epoxy Resin Substrate Based 1.2 Kv SiC Half Bridge Module with Ultra-low Parasitics and High Functionality

Direct Integration of Optimized Phase-Change Heat Spreaders Into SiC Power Module for Thermal Performance Improvements Under High Heat Flux

Interleaved Planar Packaging Method of Multichip SiC Power Module for Thermal and Electrical Performance Improvement

Overview of Finite-Element Analysis in Simulation of SiC Power Device Packaging

Development of High Reliability Power SiC Module Platform Packag-ing for Low Carbon Vehicles