Growth and characterization of epitaxial films based on semimagnetic Pb[math]EuxTe solid solutions on various substrates

Matanat Mehrabova,Rafig Sadigov,Idayat Nuriyev,Afin Nazarov
DOI: https://doi.org/10.1142/s0217979224504198
2024-01-25
International Journal of Modern Physics B
Abstract:International Journal of Modern Physics B, Ahead of Print. This paper presents the results of a study of the growth and structure properties of Pb[math]EuxTe, ([math]) epitaxial films with 0.5–1[math][math]m thickness, grown on BaF2 and SiO2 substrates oriented in the (111) direction, by the molecular beam condensation method in a vacuum of 10[math] Pa with the use of an additional compensating source of Te vapor during the growth process. The optimal conditions for obtaining structurally perfect ([math]–100[math]) epitaxial films were established: [math]–623[math]K; [math]K; [math]–9 Å/s. It was determined that conductivity inversion occurs at the temperature of the compensating source 410[math]K.
physics, condensed matter, applied, mathematical
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