Abstract:Electron leakage from the active region to the p-type region restricts the performance of GaN-based Vertical-Cavity Surface-Emitting Lasers (VCSELs). AlGaN EBL can decrease the leakage current, but also raises the hole injection barrier and reduce the hole injection efficiency. Then, it is important to design EBL structures that can enhance both electron blocking and hole injection. In this study, VCSEL devices with three different EBL, basic structure Al0.6Ga0.4N EBL labeled as Device A, newly proposed 16 nm thick Al0.75-0.80Ga0.25-0.20N EBL labeled as Device B, and 18 nm thick Al0.75-0.80Ga0.25-0.20N EBL labeled as Device C, respectively, are designed and analyzed using PICS 3D simulation. Device A represents a basic VCSEL structure, while Device C incorporates a graded electron-blocking layer (EBL) with adjusted thickness. Through simulation results, it is observed that the introduction of a graded EBL in Device C leads to significant performance enhancements compared to the basic structure of Device A. Specifically, the graded EBL effectively reduces band bending and increases the electron barrier height, thereby improving carrier confinement and reducing electron leakage. Additionally, the utilize of a Graded structure in Device C aids in strain relief at the layout between the QB and EBL, resulting in improved electron-blocking capability and potentially enhanced hole transport characteristics. These findings underscore the importance of EBL grading in optimizing the performance of VCSELs, highlighting its potential for advancing the efficiency and functionality of these semiconductor devices. Power of the device C is being improved upto 4.16%, similarly the conduction band barrier height is improved upto 26.6% which is beneficial for better VCSEL performance as it enhances electron confinement in the active region, leading to increased efficiency and reduced carrier leakage and valance band barrier height decreases upto 6.52% and threshold current is decreased upto 4.8%.

Design of electron blocking layer and its influence on the radial hole transport in GaN-based vertical cavity surface emitting laser diodes

Improvement of Hole Injection and Electron Overflow by a Tapered AlGaN Electron Blocking Layer in InGaN-based Blue Laser Diodes

Optimization of AlGaN-Based Deep Ultraviolet Laser Diodes with Graded Rectangular Superlattice Electron Blocking Layer and Graded Trapezoidal Superlattice Hole Blocking Layer

Comprehensive Design and Numerical Study of GaN Vertical MPS Diodes Towards Alleviated Electric Field Crowding and Efficient Carrier Injection

Optimization of the Electron Blocking Layer in GaN Laser Diodes

Implementation of electron restriction layer in n-AlGaN toward balanced carrier distribution in deep ultraviolet light-emitting-diodes

Enhanced performance in deep-ultraviolet laser diodes with an undoped BGaN electron blocking layer.

High Performance of AlGaN Deep-Ultraviolet Light Emitting Diodes Due to Improved Vertical Carrier Transport by Delta-Accelerating Quantum Barriers

Design of double-lattice GaN-PCSEL based on triangular and circular holes

Enhanced Hole Injection in AlGaN-Based Ga-Polar Ultraviolet Light-Emitting Diodes with Polarized Electric-Field Reservoir Electron Barrier

Calculating the Effect of AlGaN Dielectric Layers in a Polarization Tunnel Junction on the Performance of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

High Hole Injection for Nitrogen-Polarity AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

Effects of Lateral Optical Confinement in GaN VCSELs with Double Dielectric DBRs

Enhanced Performance of GaN based VCSELs through Graded Electron-Blocking Layer Design

Optimization of AlGaN-based deep ultraviolet light emitting diodes with superlattice step doped electron blocking layers

Demonstrating the Electron Blocking Effect of AlGaN/GaN Superlattice Cladding Layers in GaN-based Laser Diodes

Compositional Degradation of the Electron Blocking Layers Through Solid-Solution in GaN-based Laser Diodes

AlGaN-Based Deep-Ultraviolet Laser Diodes with Novel Superlattice Electron-Blocking Layers

Role of Electron Injection on Vertical Leakage in GaN-on-Si Epitaxial Layers

On the integrated p-type region free of electron blocking layer for AlGaN-based deep-ultraviolet light emitting diodes

Vertical power diodes based on bulk GaN substrates