Abstract:As a wide bandgap semiconductor material, silicon carbide has promising prospects for application. However, its commercial production size is currently 6 inches, and the difficulty in preparing larger single crystals increases exponentially with size increasing. Large-size single crystal growth is faced with the enormous problem of radial growth conditions deteriorating. Based on simulation tools, the physical field of 8-inch crystal growth is modeled and studied. By introducing the design of the seed cavity, the radial temperature difference in the seed crystal surface is reduced by 88% from 93 K of a basic scheme to 11 K, and the thermal field conditions with uniform radial temperature and moderate temperature gradient are obtained. Meanwhile, the effects of different processing conditions and relative positions of key structures on the surface temperature and axial temperature gradients of the seed crystals are analyzed in terms of new thermal field design, including induction power, frequency, diameter and height of coils, the distance between raw materials and the seed crystal. Meanwhiles, better process conditions and relative positions under experimental conditions are obtained. Based on the optimized conditions, the thermal field verification under seedless conditions is carried out, discovering that the single crystal deposition rate is 90% of that of polycrystalline deposition under the experimental conditions. Meanwhile, an 8-inch polycrystalline with 9.6 mm uniform deposition was successfully obtained after 120 h crystal growth, whose convexity is reduced from 13 mm to 6.4 mm compared with the original scheme. The results indicate that the optimized conditions can be used for single-crystal growth.

Optimal Cooling System Design for Increasing the Crystal Growth Rate of Single-Crystal Silicon Ingots in the Czochralski Process Using the Crystal Growth Simulation

Numerical Simulation of Directional Solidification Process for the Polycrystalline Silicon Ingot

Optimization of silicon ingot manufacturing for high production rates

Optimization of the Thermal Field of 8-Inch SiC Crystal Growth by PVT Method with “3 Separation Heater Method”

Effects of Solution Height and Crystal Rotation on the Solution Flow Behavior in the Top-Seeded Solution Growth of SiC Single Crystals

Reduction of oxygen concentration in 300 mm diameter n-type Czochralski silicon crystal growth by optimized heating zone with dual side-heaters

Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth

Numerical Investigation on the Effect of Thermal Gate Moving Rate on Directional Solidification Process

Numerical Investigation of Bottom Grille for Improving Large-Size Silicon Quality in Directional Solidification Process

Optimization of thermal field of 150 mm SiC crystal growth by PVT method

Numerical study of continuous Czochralski (CCz) silicon single crystal growth in a double-side heater

Solidification Interface Shape Control in a Continuous Czochralski Silicon Growth System

Optimal Magnetic Graphite Heater Design for Impurity Control in Single-Crystal Si Grower Using Crystal Growth Simulation

Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block

Effect of Ramping from Low Temperatures on Oxygen Precipitation in Czochralski Silicon

Effect of Water-Cooling Jacket on Thermal Stress of Large-Diameter Silicon Grown by Czochralski Method

Diameter-Controlled Czochralski Growth of Silicon Crystals

A thermal deformation optimization method for cryogenically cooled silicon crystal monochromators under high heat load

Influence of Inner Crucible Radius Variation on the Thermal Field and Oxygen Transport in the Melt During the Growth of Silicon by Continuous Czochralski Method

Optimum Design and Simulation Analysis of Temperature Field on Sapphire Crystal Growth with GOI Method

Thermal system design and optimization of an industrial silicon directional solidification system