Abstract:The main method for producing single silicon crystal is the Czochralski (CZ) method, which is widely utilized to grow high-quality, large-size semiconductor crystals. The ideal physical property parameters of the materials that build the various parts of the crystal growth furnace can optimize the thermal field distribution during the crystal growth process. It also can improve the crystal quality and reduce the energy consumption. In this work, we study the effect of physical property parameters, including thermal conductivity, specific heat, and density of the insulation material inside the heat shield, on the global thermal field during the crystal growth process. The results show that the thermal conductivity significantly affects the deflection of the melt-crystal (m-c) interface, the thermal stress, the axial temperature gradient in the crystal, and the heater power. The deflection of the m-c interface increases with increasing thermal conductivity. The thermal stress increases with the increase of the interface deflection, which will have an impact on the crystal quality. The axial temperature gradient in the crystal increases with decreasing thermal conductivity. In contrast, the temperature distribution in the melt shows no significant change, which will increase the output of the single silicon crystal and ultimately reduce the production cost. Meanwhile, the heater power decreases with decreasing thermal conductivity. The material's specific heat and density magnitudes show almost no effect on these parameters. Our results suggest that selecting insulation materials inside the heat shield with low thermal conductivity can improve the crystal quality and reduce the production cost.

Effect of Water-Cooling Jacket on Thermal Stress of Large-Diameter Silicon Grown by Czochralski Method

Effect of water-cooled jacket on the oxygen transport during the Czochralski silicon crystal growth process

Study on Power Consumption and Heat Transfer Paths in Czochralski Silicon Crystal Growth Based on Global 3D Numerical Simulation

Influence of Thermal Conductivity and Emissivity of Heat Shield Surface Material on the Thermal Field of Czochralski Silicon Crystal Growth

Influence of Crystal Growth Rate on the Thermal Field in a Directional Solidification Process for Silicon Solar Cells

Effect of Heat Transfer During the Vacuum Directional Solidification Process on the Crystal Quality of Multicrystalline Silicon

Optimization of the Thermal Field of 8-Inch SiC Crystal Growth by PVT Method with “3 Separation Heater Method”

The effects on heat and oxygen transport of different heat shield and sidewall insulation designs during continuous Czochralski silicon crystal growth

Influence of Inner Crucible Radius Variation on the Thermal Field and Oxygen Transport in the Melt During the Growth of Silicon by Continuous Czochralski Method

Numerical Investigation on the Effect of Thermal Gate Moving Rate on Directional Solidification Process

Study on thermal stress in a silicon ingot during a unidirectional solidification process

Numerical Analysis of Solid–liquid Interface Shape During Large-Size Single Crystalline Silicon with Czochralski Method

Numerical Investigation of the Effect of Rotation on the Oscillatory Thermocapillary Convection and Dopant Transport in a Silicon Liquid Bridge

Thermal Field Design of a Large-Sized SiC Using the Resistance Heating PVT Method Via Simulations

Optimization of thermal field of 150 mm SiC crystal growth by PVT method

The Effect of Physical Property Parameters of the Insulation Material Inside the Heat Shield on the Growth of Czochralski Silicon Crystal

Hot-zone design and optimization of resistive heater for SiC single crystal growth

Study on the Effect of Melt Flow Behavior on the Uniformity of Phosphorus Doping During the Growth of Large-Size N-Type Monocrystalline Silicon by Czochralski Method

Optimal Cooling System Design for Increasing the Crystal Growth Rate of Single-Crystal Silicon Ingots in the Czochralski Process Using the Crystal Growth Simulation

In situ observation and numerical analysis of temperature gradient effects on growth velocity during directional solidification of silicon

Simulation of Heat Transfer in a Vertical Tubular CVD Reactor