Abstract:SiC substrates have outstanding advantages over traditional materials in power device application, and are mainly prepared by a physical vapor transport method (PVT). Whether the PVT furnace works by resistance heating or induction heating, both face the problem of the deterioration of growth conditions during a long-term process. The relative position of the thermal field directly affects the crystal growth conditions, but the law of specific influence and the change in physical environment inside the thermal field have not been made sufficiently clear and lack systematic research. Therefore, SiC single crystal growth, with different directions and rates in the direction of movement of the heating module, was modeled using a simulation method, and the law of variation of the physical field, including heat flux, temperature, powder porosity and growth rate parameters under different schemes, was analyzed. The study indicates that the decay of raw materials is the primary reason why growth conditions cannot be maintained. The results verified that different coils' modes of movement have different effects on the improvement or adjustment of SiC crystals' growth conditions. Under the same temperature control conditions, the coils' movement rates of 200 μm/h, 0, -200 μm/h and -400 μm/h correspond to the average growth rates of 140, 152, 165 and 172 μm/h, respectively. The results show that downward displacement of the coils is beneficial in compensating for the deterioration of growth conditions, but it is easier to form convex surfaces and is not conducive to expanding diameter growth. This also verifies that the desired crystal growth state can be obtained by adjusting the position of the thermal field.

The Effect of Physical Property Parameters of the Insulation Material Inside the Heat Shield on the Growth of Czochralski Silicon Crystal

Influence of Thermal Conductivity and Emissivity of Heat Shield Surface Material on the Thermal Field of Czochralski Silicon Crystal Growth

The effects on heat and oxygen transport of different heat shield and sidewall insulation designs during continuous Czochralski silicon crystal growth

Influence of Inner Crucible Radius Variation on the Thermal Field and Oxygen Transport in the Melt During the Growth of Silicon by Continuous Czochralski Method

Numerical Simulation of Β-Ga2o3 Single Crystal Growth by Czochralski Method with an Insulation Lid

Optimization of the Thermal Field of 8-Inch SiC Crystal Growth by PVT Method with “3 Separation Heater Method”

Numerical study of continuous Czochralski (CCz) silicon single crystal growth in a double-side heater

Influence of Crystal Growth Rate on the Thermal Field in a Directional Solidification Process for Silicon Solar Cells

Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

To investigate interface shape and thermal stress during sapphire single crystal growth by the Cz method

Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots

Optimization of silicon ingot manufacturing for high production rates

Optimization of thermal field of 150 mm SiC crystal growth by PVT method

Study of Effect of Coil Movement on Growth Conditions of SiC Crystal

To Control Interface Shape and to Reduce Thermal Stress During Cz-Growth of Sapphire Single Crystal

Numerical Investigation on the Effect of Thermal Gate Moving Rate on Directional Solidification Process

Thermal Field Design of a Large-Sized SiC Using the Resistance Heating PVT Method Via Simulations

Study on Power Consumption and Heat Transfer Paths in Czochralski Silicon Crystal Growth Based on Global 3D Numerical Simulation

Effect of water-cooled jacket on the oxygen transport during the Czochralski silicon crystal growth process

Impact of Thermal Stress on Intrinsic Point Defect in Czochralski Crystal Growth: Developing a Quantitative Model for Defect Formation and Distribution

Numerical Analysis of Solid–liquid Interface Shape During Large-Size Single Crystalline Silicon with Czochralski Method