Abstract:SiC materials and devices are highly regarded in the power semiconductor industry for their exceptional electrical, thermal, and chemical properties. They meet the demanding requirements of high temperature, voltage, frequency, power, and radiation resistance applications. With the increasing demand for new energy vehicles, 5G communications, rail transit, and ultra-high voltage transmission, SiC power devices are rapidly expanding. However, the quality of SiC wafers still needs improvement compared to well-established Si-based semiconductor technology. The maturity of SiC wafer manufacturing directly impacts device performance. This comprehensive review focuses on the thorough characterization and analysis of SiC wafers. It includes quantitative and qualitative assessments of material composition, trace elements, microscopic and lattice structures, binding energy, chemical bonds, and electrical properties. SiC wafers and epitaxial layers have defect densities several orders of magnitude higher than Si wafers, significantly affecting the electrical performance and reliability of semiconductor devices. The study analyzes surface defects in SiC wafers and calculates yield using a Poisson Model based on defect density, providing insights for SiC manufacturing cost analysis. Additionally, the review conducts a series of systematic failure investigations on a SiC power trench MOSFET through failure mode analysis. Thermally-induced voltage variation technology identifies the failure location. Electrical performance simulation analysis utilizes physical parameters extracted from a matured SiC MOSFET product chip. This report offers a comprehensive overview of SiC material and device characterization, analysis, and failure investigation for power electronics engineering. The findings enhance the understanding of SiC technology and its potential for further advancements in the power semiconductor industry.

Characterization of Defects in Silicon Carbide by Raman Spectroscopy

Characterizations on the Doping of Single-Crystal Silicon Carbide

Characterization methods for defects and devices in silicon carbide

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Influence of Defects in SiC (0001) on Epitaxial Graphene

Characterization of Surface and Structure of in-situ Doped Sol-Gel-Derived Silicon Carbide

Effect of defects on optical phonon Raman spectra in SiC nanorods

Characterization and formation of NV centers in 3C, 4H and 6H SiC: an \emph{ab initio} study

Resonance enhancement of electronic Raman scattering from nitrogen defect levels in silicon carbide

Characterization, Analysis, and Failure Investigation of SiC Materials and Power Devices

Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide

Chemical Vapor Deposition and Defect Characterization of Silicon Carbide Epitaxial Films

New Approaches and Understandings in the Growth of Cubic Silicon Carbide

Defect-driven tunable electronic and optical properties of two-dimensional silicon carbide

Novel Electrical Characterization of Thin 3C-Sic Films on Si Substrates

Exploring Defect Dynamics and Twin-Layer Interactions in SiC Crystals through Molecular Simulations

A First-Principles Study of Defects and Adatoms in Silicon Carbide Honeycomb Structures

Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis

Time-Gated Optical Spectroscopy of Field-Effect Stimulated Recombination via Interfacial Point Defects in Fully-Processed Silicon Carbide Power MOSFETs

Sensitivity of Multislice Electron Ptychography to Point Defects: A Case Study in SiC