Abstract:SiC materials and devices are highly regarded in the power semiconductor industry for their exceptional electrical, thermal, and chemical properties. They meet the demanding requirements of high temperature, voltage, frequency, power, and radiation resistance applications. With the increasing demand for new energy vehicles, 5G communications, rail transit, and ultra-high voltage transmission, SiC power devices are rapidly expanding. However, the quality of SiC wafers still needs improvement compared to well-established Si-based semiconductor technology. The maturity of SiC wafer manufacturing directly impacts device performance. This comprehensive review focuses on the thorough characterization and analysis of SiC wafers. It includes quantitative and qualitative assessments of material composition, trace elements, microscopic and lattice structures, binding energy, chemical bonds, and electrical properties. SiC wafers and epitaxial layers have defect densities several orders of magnitude higher than Si wafers, significantly affecting the electrical performance and reliability of semiconductor devices. The study analyzes surface defects in SiC wafers and calculates yield using a Poisson Model based on defect density, providing insights for SiC manufacturing cost analysis. Additionally, the review conducts a series of systematic failure investigations on a SiC power trench MOSFET through failure mode analysis. Thermally-induced voltage variation technology identifies the failure location. Electrical performance simulation analysis utilizes physical parameters extracted from a matured SiC MOSFET product chip. This report offers a comprehensive overview of SiC material and device characterization, analysis, and failure investigation for power electronics engineering. The findings enhance the understanding of SiC technology and its potential for further advancements in the power semiconductor industry.

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