Abstract:Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other applications of semiconductor materials. However, it is still under debate how the defect structure determines the band structure, and therefore, the recombination behavior of electron-hole pairs responsible for the optical and electrical properties of the extended defects. The present paper is a survey of procedures for the spatially resolved investigation of structural and of physical properties of extended defects in semiconductor materials with a scanning electron microscope (SEM). Representative examples are given for crystalline silicon. The luminescence behavior of extended defects can be investigated by cathodoluminescence (CL) measurements. They are particularly valuable because spectrally and spatially resolved information can be obtained simultaneously. For silicon, with an indirect electronic band structure, CL measurements should be carried out at low temperatures down to 5 K due to the low fraction of radiative recombination processes in comparison to non-radiative transitions at room temperature. For the study of the electrical properties of extended defects, the electron beam induced current (EBIC) technique can be applied. The EBIC image reflects the local distribution of defects due to the increased charge-carrier recombination in their vicinity. The procedure for EBIC investigations is described for measurements at room temperature and at low temperatures. Internal strain fields arising from extended defects can be determined quantitatively by cross-correlation electron backscatter diffraction (ccEBSD). This method is challenging because of the necessary preparation of the sample surface and because of the quality of the diffraction patterns which are recorded during the mapping of the sample. The spatial resolution of the three experimental techniques is compared.

Advances in defect characterization techniques using polarized light observation in SiC wafers for power devices

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

Characterization, Analysis, and Failure Investigation of SiC Materials and Power Devices

Characterization methods for defects and devices in silicon carbide

Characterizations on the Doping of Single-Crystal Silicon Carbide

Analysis of dislocation configurations in SiC crystals through X-ray topography aided by ray tracing simulations

Defect engineering in SiC technology for high-voltage power devices

Understanding the Breakdown Asymmetry of 4H-Sic Power Diodes with Extended Defects at Locations along Step-Flow Direction

Electronic and Optical Properties of Threading Dislocations in n-Type 4H-SiC

(Invited) Defects in Cast-Mono Crystalline Silicon

Analysis of Dislocation Structures in 4H-Sic by Synchrotron X-ray Topography

Magnetism in Defect-Induced SiC Single Crystals

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Statistical Analysis of Killer and Non-Killer Defects in SiC and the Impacts to Device Performance

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Subsurface Damage Detection on Ground Silicon Wafers Using Polarized Laser Scattering

A Review of Wide Bandgap Semiconductors: Insights into SiC, IGZO, and Their Defect Characteristics

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Automatic Detection of Basal Plane Dislocations in a 150-mm SiC Epitaxial Wafer by Photoluminescence Imaging and Template-matching Algorithm

Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals

Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide