Abstract:Controlled placement of nanomaterials at predefined locations with nanoscale precision remains among the most challenging problems that inhibit their large-scale integration in the field of semiconductor process technology. Methods based on surface functionalization have a drawback where undesired chemical modifications can occur and deteriorate the deposited material. The application of electric-field assisted placement techniques eliminates the element of chemical treatment; however, it requires an incorporation of conductive placement electrodes that limit the performance, scaling, and density of integrated electronic devices. Here, we report a method for electric-field assisted placement of solution-processed nanomaterials by using large-scale graphene layers featuring nanoscale deposition sites. The structured graphene layers are prepared via either transfer or synthesis on standard substrates, then are removed without residue once nanomaterial deposition is completed, yielding material assemblies with nanoscale resolution that cover surface areas larger than 1mm2. In order to demonstrate the broad applicability, we have assembled representative zero-, one-, and two-dimensional semiconductors at predefined substrate locations and integrated them into nanoelectronic devices. This graphene-based placement technique affords nanoscale resolution at wafer scale, and could enable mass manufacturing of nanoelectronics and optoelectronics involving a wide range of nanomaterials prepared via solution-based approaches.

Graphene-assisted metal transfer printing for wafer-scale integration of metal electrodes and two-dimensional materials

Electrode transfer method toward high-performance interfaces and devices

Graphene‐Enhanced Metal Transfer Printing for Strong van der Waals Contacts between 3D Metals and 2D Semiconductors

Graphene-enhanced van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts

Integrated wafer-scale ultra-flat graphene by gradient surface energy modulation

Graphene-enabled, directed nanomaterial placement from solution for large-scale device integration

Graphene-enabled and directed nanomaterial placement from solution for large-scale device integration

High-quality Graphene Transfer Via Directional Etching of Metal Substrates.

Towards pristine graphene-metal interface and microstructures: Laser assisted direct patterning on Epitaxial graphene

Electron-Beam Direct Writing-Based High-Performance Graphene Electrode Fabrication

Engineering the Metal–organic Interface by Transferring a High-Quality Single Layer Graphene on Top of Organic Materials

Monolithic 3D integration with 2D materials

Laminar Flow-Assisted Metal Etching for the Preparation of High-Quality Transfer-Free Graphene

Liquid Metal Oxide-assisted Integration of High-k Dielectrics and Metal Contacts for Two-Dimensional Electronics

Assessment of wafer-level transfer techniques of graphene with respect to semiconductor industry requirements

Metal-film-assisted ultra-clean transfer of single-walled carbon nanotubes

Activating "Invisible" Glue: Using Electron Beam for Enhancement of Interfacial Properties of Graphene-Metal Contact

The Influence of Graphene on the Electrodeposition of Metals

Monolithic and heterogeneous three-dimensional integration of two-dimensional materials with high-density vias

A universal resist-assisted metal transfer method for 2D semiconductor contacts