Abstract:Graphene is the most broadly discussed and studied two‐dimensional material because of its preeminent physical, mechanical, optical, and thermal properties. Until now, metal‐catalyzed chemical vapor deposition (CVD) has been widely employed for the scalable production of high‐quality graphene. However, in order to incorporate the graphene into electronic devices, a transfer process from metal substrates to targeted substrates is inevitable. This process usually results in contamination, wrinkling, and breakage of graphene samples ‐ undesirable in graphene‐based technology and not compatible with industrial production. Therefore, direct graphene growth on desired semiconductor and dielectric substrates is considered as an effective alternative. Over the past years, there have been intensive investigations to realize direct graphene growth using CVD methods without the catalytic role of metals. Owing to the low catalytic activity of non‐metal substrates for carbon precursor decomposition and graphene growth, several strategies have been designed to facilitate and engineer graphene fabrication on semiconductors and insulators. Here, those developed strategies for direct CVD graphene growth on semiconductors and dielectrics for transfer‐free fabrication of electronic devices are reviewed. By employing these methods, various graphene‐related structures can be directly prepared on desired substrates and exhibit excellent performance, providing versatile routes for varied graphene‐based materials fabrication.

Engineering the Metal–organic Interface by Transferring a High-Quality Single Layer Graphene on Top of Organic Materials

Towards pristine graphene-metal interface and microstructures: Laser assisted direct patterning on Epitaxial graphene

High-quality Graphene Transfer Via Directional Etching of Metal Substrates.

Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures

Planar Nanoscale Architecture for Organic Thin-Film Field-Effect Transistors

Metal/Organic Interfaces: Efficient Charge Injection in Organic Field-Effect Transistors Enabled by Low-Temperature Atomic Layer Deposition of Ultrathin VOx Interlayer (adv. Funct. Mater. 25/2016)

Partially-Screened Field Effect and Selective Carrier Injection at Organic Semiconductor / Graphene Heterointerface.

Graphene as a Transparent and Conductive Electrode for Organic Optoelectronic Devices

Laminar Flow-Assisted Metal Etching for the Preparation of High-Quality Transfer-Free Graphene

A Scalable Polymer-Free Method for Transferring Graphene Onto Arbitrary Surfaces

Electrode transfer method toward high-performance interfaces and devices

Transfer of graphene onto arbitrary substrates via sublimable carrier

Transfer-Free Fabrication of Graphene Scaffolds on High-k Dielectrics from Metal-Organic Oligomers.

Transfer of Graphene with Protective Oxide Layers

Clean and Efficient Transfer of CVD-grown Graphene by Electrochemical Etching of Metal Substrate

Modified RCA clean transfer of graphene and all-carbon electronic devices fabrication

Recent Advances in Transfer‐Free Synthesis of High‐Quality Graphene

Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes

Direct CVD Graphene Growth on Semiconductors and Dielectrics for Transfer‐Free Device Fabrication

Recent Progress in the Transfer of Graphene Films and Nanostructures

Direct transfer of multilayer graphene grown on a rough metal surface using PDMS adhesion engineering