Abstract:Topological insulators (TIs) have become one of the intensely pursed topics during the past few years due to their robust gapless edge states, among which bismuth (Bi) enjoys a good reputation because of its rich quantum states. However, bulk Bi itself is topologically trivial. While thin Bi film has long been theoretically perceived to be a two-dimensional topological insulator, it still remains a challenge to construct free-standing Bi(111) film experimentally. Herein, we investigate the epitaxial growth of bismuth films on graphene with the film facet ranging from (110) to (111) with increasing coverage and demonstrate the topologically nontrivial property embedded in Bi(111) layers by angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations. In contrast to the bulk Bi with semimetallicity, a metallic surface state is revealed in the 7-bilayer Bi(111) with a circle-shape photoemission intensity plot, while the stacking of free-standing bismuth bilayers on graphene is rationalized to be responsible for the nontrivial characteristics of Bi(111) with an odd crossing of the Fermi level. Our report herein proposes an intriguing approach toward fabricating topologically nontrivial bismuth film, as well as advancing the fundamental understanding of Bi(111) bilayers. Importantly, the combination of the nontrivial Bi(111) film and graphene might also shed useful insights into the development of nanotronics and spintronics.

Heteroepitaxial Growth of InBi(001)

A topological material in the III-V family: heteroepitaxial InBi on InAs

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Coherent Heteroepitaxy of Bi2Se3 on GaAs (111)B

Single-crystalline PbTe film growth through reorientation

Epitaxial phases of high Bi content GaSbBi alloys

Single Domain Bi2Se3 Films Grown on InP(111)A by Molecular-Beam Epitaxy

Study on Epitaxial Growth of High‐Quality InSb Materials

Epitaxial Growth of Free-Standing Bismuth Film on Graphene Embedded with Nontrivial Properties

Epitaxial Growth of Lattice-Matched InSb/CdTe Heterostructures on the GaAs(111) Substrate by Molecular Beam Epitaxy

Molecular Beam Epitaxy of Bilayer Bi(111) Films on Topological Insulator Bi2te3: A Scanning Tunneling Microscopy Study

A surface and interface study on the InSb/GaAs heterostructures

Large-Scale Epitaxial Integration of Single-Crystalline BiSb Topological Insulator on GaAs (111)A

Hetero-epitaxial Growth and Mechanism of One-Dimensional InSb Nanostructures on GaAs Substrate by MOCVD

Surface and Interface Properties of InSb Epitaxial Thin Films Grown on Gaas by Low Pressure Metalorganic Chemical Vapor Deposition

Molecular beam epitaxial growth of topological insulators.

Growth characteristics of topological insulator Bi2Se3 films on different substrates

Metalorganic vapor phase epitaxy growth and characterization of quaternary (Ga,In)(As,Bi) on GaAs substrates

Initial stage of InSb heteroepitaxial growth on GaAs (111)A: effect of thin InAs interlayers

Intrinsic Ultrathin Topological Insulators Grown via MBE Characterized by in-situ Angle Resolved Photoemission Spectroscopy

The van der Waals epitaxy of Bi2Se3 on the vicinal Si(111) surface: An approach for preparing high-quality thin films of a topological insulator