Abstract:InBi(001) is formed epitaxially on InAs(111)-A by depositing Bi on to an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, close to the M bar high symmetry point. This demonstrates a heteroepitaxial system entirely in the III-V family with topological electronic properties. InBi shows coexistence of Bi and In surface terminations, in contradiction with other III-V materials. For the Bi termination, the study gives a consistent physical picture of the topological surface electronic structure of InBi(001) terminated by a Bi bilayer rather than a surface formed by splitting to a Bi monolayer termination. Theoretical calculations based on relativistic density functional theory and the one-step model of photoemission clarify the relationship between the InBi(001) surface termination and the topological surface states, supporting a predominant role of the Bi bilayer termination. Furthermore, a tight-binding model based on this Bi bilayer termination with only Bi-Bi hopping terms, and no Bi-In interaction, gives a deeper insight into the spin texture.

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to explore the heteroepitaxial growth of InBi in III - V materials and the characteristics of its topological surface states. Specifically, the researchers formed InBi(0 0 1) thin films by depositing Bi on InAs(1 1 1)-A substrates, and through techniques such as angle - resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), and low - energy electron diffraction (LEED), they revealed the existence of new non - trivial metallic surface states on the InBi(0 0 1) surface, which are close to the high - symmetry point M in the surface Brillouin zone. In addition, theoretical calculations show that there are two co - existing surface terminations, Bi bilayer and In monolayer, on the InBi(0 0 1) surface, which is inconsistent with the traditional three - layer model, further supporting the dominant role of Bi bilayer termination in the formation of topological surface states. ### Main research questions: 1. **Heteroepitaxial growth of InBi**: How to grow InBi(0 0 1) thin films on InAs(1 1 1)-A substrates by molecular beam epitaxy (MBE) technology? 2. **Characterization of topological surface states**: Are there topologically protected surface states on the InBi(0 0 1) surface? What are the properties of these surface states? 3. **Determination of surface termination**: What is the termination structure of the InBi(0 0 1) surface? Do Bi bilayer termination and In monolayer termination co - exist? ### Research methods: - **Experimental methods**: - **Sample preparation**: Under ultra - high vacuum (UHV) conditions, deposit about 20 bilayers of Bi on InAs(1 1 1)-A substrates to form InBi(0 0 1) thin films. - **Characterization techniques**: - **ARPES**: Used to measure the electronic band structure. - **STM**: Used to characterize the surface morphology. - **LEED**: Used to characterize the surface structure. - **XRD**: Used to characterize the crystal structure. - **Theoretical methods**: - **Density functional theory (DFT)**: Use the fully relativistic Korringa - Kohn - Rostoker (KKR) Green's function formalism for electronic structure calculations. - **Tight - binding model**: Based on the tight - binding model of Bi bilayer termination, explain the spin texture of surface states. ### Main findings: - **Topological surface states on InBi(0 0 1) surface**: New non - trivial metallic surface states were observed near the M point, and these surface states exhibit behavior similar to Dirac points. - **Co - existing surface terminations of Bi bilayer and In monolayer**: Both experimental and theoretical results show that there are two co - existing surface terminations, Bi bilayer and In monolayer, on the InBi(0 0 1) surface. - **Spin texture**: The calculation results of the tight - binding model are consistent with the experimental data, revealing the spin texture of surface states, including pure Rashba - type and Rashba - Dresselhaus - type spin textures. ### Conclusion: This study successfully grew InBi(0 0 1) thin films on InAs(1 1 1)-A substrates and revealed for the first time the detailed characteristics of their topological surface states. These findings not only provide important insights for understanding the electronic structure of InBi, but also lay the foundation for the development of new topological insulator devices based on III - V materials.

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