Abstract:Reversible conversion over multi-million-times in bond types between metavalent and covalent bonds becomes one of the most promising bases for universal memory. As the conversions have been found in metastable states, extended category of crystal structures from stable states via redistribution of vacancies, researches on kinetic behavior of the vacancies are highly on demand. However, they remain lacking due to difficulties with experimental analysis. Herein, the direct observation of the evolution of chemical states of vacancies clarifies the behavior by combining analysis on charge density distribution, electrical conductivity, and crystal structures. Site-switching of vacancies gradually occurs with diverged energy barriers owing to a unique activation code-the accumulation of vacancies triggers spontaneous gliding along atomic planes to relieve electrostatic repulsion. Study on the behavior can be further applied to multi-phase superlattices composed of Sb2Te3 (2D) and GeTe (3D) sublayers, which represent the superior memory performances but their operating mechanisms were still under debates due to their complexity. The site-switching is favorable (suppressed) when Te-Te bonds are formed as physisorption (chemisorption) over the interface between Sb2Te3 (2D) and GeTe (3D) sublayers driven by configurational entropic gain (electrostatic enthalpic loss). Depending on the type of interfaces between sublayers, phases of the superlattices are classified into metastable and stable states, where the conversion could be only achieved in the metastable state. From this comprehensive understanding on the operating mechanism via kinetic behaviors of vacancies and the metastability, further studies towards vacancy engineering are expected in versatile materials.

Ultrahigh Stability and Operation Performance in Bidoped GeTe/Sb 2 Te 3 Superlattices Achieved by Tailoring Bonding and Structural Properties

The Coupling Effect and Phase Transition Behavior of Multiple Interfaces in GeTe/Sb Superlattice-Like Films

Bonding Nature and Optical Contrast of TiTe_2/Sb_2Te_3 Phase-Change Heterostructure

Manipulation of Dangling Bonds of Interfacial States Coupled in GeTe-rich GeTe/Sb2Te3 Superlattices

Low Thermal Conductivity Phase Change Memory Superlattices

Gete/Crsb2te Superlattice-Like Thin Film for Excellent Thermal Stability and High Phase Change Speed

Atomic Layer Deposition of Sb2Te3/GeTe superlattice Film and Its Melt‐Quenching‐Free Phase Transition Mechanism for Phase‐Change Memory

GeTe/Sb7Te3 Superlatticelike Structure for Lateral Phase Change Memory

Co-doping: An effective strategy for developing stable and high-speed Sb2Te-based phase-change memory

Conversion between metavalent and covalent bond in metastable superlattices composed of 2D and 3D sublayers

Layer‐Switching Mechanisms in Sb2Te3

Genesis and Effects of Swapping Bilayers in Hexagonal GeSb2Te4

Study on the Thermal Stability Improvement of GeTe by Al Doping

Unveiling structural characteristics for ultralow resistance drift in BiSb- Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> materials for phase-change neuron synaptic devices

Uncovering Thermal and Electrical Properties of Sb2Te3/GeTe Superlattice Films

Doping strategy in metavalently bonded materials for advancing thermoelectric performance

Unveiling structural characteristics for ultralow resistance drift in BiSb-Ge2Sb2Te5 materials for phase-change neuron synaptic devices

Growth-Dominant Superlattice-Like Medium and Its Application in Phase Change Memory

Electrical Properties and Structural Transition of Ge2Sb2Te5 Adjusted by Rare-Earth Element Gd for Nonvolatile Phase-Change Memory

Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge 2 Sb 2 Te 5

Atomic Scale Insight into the Effects of Aluminum Doped Sb2Te for Phase Change Memory Application