Production Silicon Carbide Based on Micro and Nano-Sized Silicon Dioxide in Conditions of Thermal Plasma Energy

R. D. Gerasimov,V. V. Shekhovtsov,A. Y. Pak
DOI: https://doi.org/10.1134/s0018143923070123
2023-09-08
High Energy Chemistry
Abstract:The paper presents the results of experimental studies on the synthesis of silicon carbide based on micro and nano-sized silicon dioxide powder using thermal plasma energy. Powder synthesis was carried out at an average temperature of 5600 ± 26 K using an indirect action plasma torch with the following characteristics: current strength 40 A, voltage 100 V, plasma-forming gas flow rate 1 g/s, and thermal efficiency of 72%. According to the results of X-ray diffraction analysis, when using silicon dioxide of different dispersion compositions, 53.9 to 95.5 wt % silicon carbide is formed, and the remaining component of the synthesized powders is silicon dioxide SiO2 in various states (crystalline, amorphous). It is worth noting that the Si−O bonds in the silicon-oxygen tetrahedra of the amorphous phase are similar to the alpha-tridymite bonds in the crystalline phase. Experimental results have shown that under similar synthesis conditions, the yield of silicon carbide using nano-sized powder increases by 41.6%. This is due to the high dispersion of the nanopowder, which contributes to the creation of multiple local sources of silicon carbide formation on the contact surfaces of particles. This statement is confirmed by SEM results, which show the formation of cubic SiC particles against a branched system of mesoporous areas with particle sizes not exceeding 1 micron. The obtained research results are of interest for the production of porous high-temperature ceramic materials.
chemistry, physical
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