Abstract:The paper presents the results of experimental studies on the synthesis of silicon carbide based on micro and nano-sized silicon dioxide powder using thermal plasma energy. Powder synthesis was carried out at an average temperature of 5600 ± 26 K using an indirect action plasma torch with the following characteristics: current strength 40 A, voltage 100 V, plasma-forming gas flow rate 1 g/s, and thermal efficiency of 72%. According to the results of X-ray diffraction analysis, when using silicon dioxide of different dispersion compositions, 53.9 to 95.5 wt % silicon carbide is formed, and the remaining component of the synthesized powders is silicon dioxide SiO2 in various states (crystalline, amorphous). It is worth noting that the Si−O bonds in the silicon-oxygen tetrahedra of the amorphous phase are similar to the alpha-tridymite bonds in the crystalline phase. Experimental results have shown that under similar synthesis conditions, the yield of silicon carbide using nano-sized powder increases by 41.6%. This is due to the high dispersion of the nanopowder, which contributes to the creation of multiple local sources of silicon carbide formation on the contact surfaces of particles. This statement is confirmed by SEM results, which show the formation of cubic SiC particles against a branched system of mesoporous areas with particle sizes not exceeding 1 micron. The obtained research results are of interest for the production of porous high-temperature ceramic materials.

Silicon Carbide Surface Modification by Nitrogen Plasma Expander

Production Silicon Carbide Based on Micro and Nano-Sized Silicon Dioxide in Conditions of Thermal Plasma Energy

Structure and Properties of Spark Plasma Sintered SiC Ceramics with Oxide Additives

Effects of Mesh-Assisted Carbon Plasma Immersion Ion Implantation on the Surface Properties of Insulating Silicon Carbide Ceramics

Plasma active sintering of silicon carbide

Surface Modification of Cemented Carbide Using Plasma Nitriding and Metal Ion Implantation

Surface Modification of Silicon Carbide Wafers Using Atmospheric Plasma Etching: Effects of Processing Parameters

Modification of plasma-generated SiC nanoparticles by heat treatment under air atmosphere

Effect of Tungsten Carbide on Densification and Mechanical Properties of Silicon Nitride Ceramics by Spark Plasma Sintering

Ablation resistance and mechanism of niobium carbide coatings fabricated by plasma spraying

Preparation of porous SiC-ceramics by sol–gel and spark plasma sintering

Characterization of Surface and Structure of in-situ Doped Sol-Gel-Derived Silicon Carbide

The Oxidation Behavior of ZrB2-SiC Ceramic Composites Fabricated by Plasma Spray Process

Producing Silicon Carbide Micro and Nanostructures by Plasma‐Free Metal‐Assisted Chemical Etching

Silicon oxycarbide composites reinforced with silicon nitride and in situ formed silicon carbide.

Synthesis of Ultrafine Silicon Carbide Nanoparticles Using Nonthermal Arc Plasma at Atmospheric Pressure

Effect of temperature-dependent nano SiC on the ablation resistance of ZrC coating

Application of Atmospheric Pressure Plasma in the Ultrasmooth Polishing of SiC Optics

SiC/C machinable ceramics surface hardening by silicon infiltration

Anti-ablation Performance of Plasma Sprayed ZrB2/SiC Coatings on C/C Substrates and the Influence of a Chemical Vapor Deposited SiC Interlayer

Characterizations of Removal Rate and Temperature in the Inductively Coupled Plasma Etching of Silicon Carbide