Plasma active sintering of silicon carbide

Hai-Yun Jin,Masaaki Ishiyama,Guan-Jun Qiao,Ji-Qiang Gao,Zhi-Hao Jin
DOI: https://doi.org/10.1016/j.msea.2006.09.134
2008-01-01
Abstract:Silicon carbide (SiC) ceramics were fabricated by plasma-activated sintering. The sintering was accomplished at relatively low temperatures within a short time. The grain growth of the SiC ceramics was considerably inhibited, and finally SiC ceramics with a higher bending strength (853.7MPa) and fracture toughness (8.34MPam1/2) could be fabricated.
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