Silicon oxycarbide composites reinforced with silicon nitride and in situ formed silicon carbide.

M. Alejandra Mazo,Amador C. Caballero,Juan Rubio
DOI: https://doi.org/10.1016/j.jeurceramsoc.2024.116828
IF: 5.7
2024-08-19
Journal of the European Ceramic Society
Abstract:Dense SiOC-Si 3 N 4 composites have been obtained employing mixtures with 10% of Si 3 N 4 (SN10) or 5% Si 3 N 4 - and an extra amount of carbon-5% carbon nanofibers- (SN5N5) using spark plasma sintering (SPS). SPS produces densification at 1300/1400 °C and delays the carbothermal reaction of SiO 2 /Si 3 N 4 up to 1600 °C. It is observed the formation of a percolating network of SiC nanodots/nanowires widespread all over the matrix decorated with graphene-like carbon generated by Joule heating during SPS. The evolution of the C free is studied by conventional/non-conventional Raman parameters. In this sense, SN5N5-16 and SN10-17 show a C free phase composed by large highly tortuous and ordered graphene layers with the highest degree of interconnection and crystallinity determinant for understanding the highest thermal and electrical conductivities (1.91 WmK -1 and 33.6 Sm -1 ). Finally, this material displays a low coefficient of thermal expansion (1.26×10 -6 K -1 ), remarkable resistance against oxidation to 1400 oC and high absorptance (95.8%).
materials science, ceramics
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