Abstract:The dynamics of anomalous changes in the microstructure, as well as optical and electrical properties of microcrystalline VO 2 thin films on Si substrates during a reversible temperature-induced metal-insulator phase transition (MIT), were studied by high-resolution X-ray diffractometry (XRD), micro-Raman spectroscopy, and resistivity measurements. Temperature-dependent XRD studies of microcrystalline VO 2 films revealed the coexistence of monoclinic VO 2 (M1) and tetragonal VO 2 (R) structural phases near the MIT, attributable to deformation inhomogeneities and grain size variations. It was determined that inhomogeneous microstructural distortion is the primary factor influencing the MIT in strained VO 2 films. Concurrently, significant variations in the resistivity hysteresis were observed in association with the phase transitions. The structural phase transition (SPT) in VO 2 films was investigated via temperature-dependent micro-Raman spectroscopy, which elucidated the microstructural influence on the MIT. As the VO 2 (M1) temperature approached the critical SPT temperature (340 K), the narrow Raman spectrum of the insulating phase transitioned into a broadband spectrum characteristic of the metallic VO 2 (R) phase, marked by four pronounced peaks at approximately 230 cm −1 (B 1g ), 400 cm −1 (E g ), 550 cm −1 (A 1g ), and 635 cm −1 (B 2g ). The analysis of the V–V and V–O vibrational modes in VO 2 indicates that alterations in the V–V and V–O bond lengths are crucial to the temperature-driven SPT from the low-temperature monoclinic VO 2 (M1) phase to the high-temperature tetragonal VO 2 (R) phase. The observed hysteretic temperature dependence of the Raman intensities for V–V and V–O modes shows a quantitative correlation with the resistivity measurements of the VO 2 films, providing insights into the interplay between the SPT and the MIT. The results obtained are pivotal for comprehending the structural and electronic behaviors of nanoscale films and hold significant implications for their application in functional devices.

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