Abstract:In the recent years, ferroelectricity in Hf0.5Zr0.5O2 (HZO) has been intensively studied due to its compatibility with silicon-based ferroelectric applications, high dielectric constant, and maintenance of robust ferroelectricity even at ultrathin thickness (<10 nm). This makes it a potential alternative material in ferroelectric field-effect transistors, complementary metal-oxide-semiconductor (CMOS) gate layers, and other applications. Previous studies have explained that ferroelectricity is attributed to the transformation from a tetragonal (t-phase) to orthorhombic (o-phase) structure during cooling. Conventional HZO thin films that are directly grown on silicon are polycrystalline, which reduces the polarization efficiency in CMOS devices. To address this problem, there is a demand for epitaxial freestanding HZO (FS-HZO) thin films that can be transferred without substrate constraints. In this study, we conducted comprehensive analysis of FS-HZO membranes with varying thicknesses to investigate the relationship between ferroelectric properties and thin film thickness. With monoclinic phase (m-phase) substitution, we notice a reduced o-phase fraction and gradual suppression of ferroelectricity when the thickness is over 20 nm. Owing to the large structure anisotropy, we further observed an increase in X-ray linear dichroism with increasing thickness. In addition, the dielectric constant of FS-HZO decreases by half compared to as-grown HZO due to increased leakage current from the cracks led by the freestanding process. This study presents an important method to combine oxides with silicon-based semiconductors and detailed information on various thicknesses of FS-HZO in aspects of structure and ferroelectricity, providing a potential solution to compatibility concerns in the context of next-generation nanoelectronics.

Understanding phase evolution of ferroelectric Hf 0.5 Zr 0.5 O 2 thin films with Al 2 O 3 and Y 2 O 3 inserted layers

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Phase Transition Kinetics and Sublayer Optimization of HfO2/ZrO2 Superlattice Ferroelectric Thin Films

Orientation control of phase transition and ferroelectricity in Al-doped HfO2 thin films

Atomic Layer Deposition of Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films

Stability of ferroelectric and antiferroelectric hafnium–zirconium oxide thin films

Ferroelectric and dielectric properties of Hf0.5Zr0.5O2 thin film near morphotropic phase boundary

Quantification of Crystalline Phases in Hf 0.5 Zr 0.5 O 2 Thin Films through Complementary Infrared Spectroscopy and Ab Initio Supercell Simulations

Effects of Strain and Film Thickness on the Stability of the Rhombohedral Phase of Hf O 2

Controlling the crystallinity of HfO2 thin film using the surface energy-driven phase stabilization and template effect

Thickness-Dependent Ferroelectricity in Freestanding Hf 0.5 Zr 0.5 O 2 Membranes

Excellent Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films Induced by Al2O3 Dielectric Layer

Effects of Strain and Film Thickness on the Stability of the Rhombohedral Phase of HfO2

Formation of a Polar Ferroelectric Phase in HFO2 Films Depending on Annealing Conditions and Chemical Properties of Impurities

Effect of film thickness on phase structure of epitaxial non-doped hafnium oxide films

Effect of the number and distribution of Al2O3 atomic layer deposition cycles within HfO2 layer on ferroelectric characteristics

Interface Effects Induced by a Zr O 2 Seed Layer on the Phase Stability and Orientation of Hf O 2 Ferroelectric Thin Films: A First-Principles Study

Microstructure Research For Ferroelectric Origin In The Strained Hf0.5zr0.5o2 Thin Film Via Geometric Phase Analysis

Ferroelectricity in the Al doped HfO2