Abstract:Abstract Plasmonic lithography, which uses the evanescent electromagnetic (EM) fields to generate image beyond the diffraction limit, has been successfully demonstrated as an alternative lithographic technology for creating sub-10 nm patterns. However, the obtained photoresist pattern contour in general exhibits a very poor fidelity due to the near-field optical proximity effect (OPE), which is far below the minimum requirement for nanofabrication. Understanding the near-field OPE formation mechanism is important to minimize its impact on nanodevice fabrication and improve its lithographic performance. In this work, a point-spread function (PSF) generated by a plasmonic bowtie-shaped nanoaperture (BNA) is employed to quantify the photon-beam deposited energy in the near-field patterning process. The achievable resolution of plasmonic lithography has successfully been enhanced to approximately 4 nm with numerical simulations. A field enhancement factor ( F ) as a function of gap size is defined to quantitatively evaluate the strong near-field enhancement effect excited by a plasmonic BNA, which also reveals that the high enhancement of the evanescent field is due to the strong resonant coupling between the plasmonic waveguide and the surface plasmon waves (SPWs). However, based on an investigation of the physical origin of the near-field OPE, and the theoretical calculations and simulation results indicate that the evanescent-field-induced rapid loss of high- k information is one of the main optical contributors to the near-field OPE. Furthermore, an analytic formula is introduced to quantitatively analyze the effect of the rapidly decaying feature of the evanescent field on the final exposure pattern profile. Notably, a fast and effective optimization method based on the compensation principle of the exposure dose is proposed to reduce the pattern distortion by modulating the exposure map with dose leveling. The proposed pattern quality enhancement method can open new possibilities in the manufacture of nanostructures with ultrahigh pattern quality via plasmonic lithography, which would find potentially promising applications in high density optical storage, biosensors, and plasmonic nanofocusing.

Pattern deformation mitigation for EUV photoresists using wafer backside cleaning techniques

Photolithography Using Lateral Surface of Nanofibers

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Fundamentals of the reaction-diffusion process in model EUV photoresists

Measurements of CD and sidewall profile of EUV photomask structures using CD-AFM and tilting-AFM

Optimization of Spatial Dose Distribution for Controlling Sidewall Shape in Electron-beam Lithography

Wafer Edge Process Integration and Defect Inspection with the Immersion Lithography Process

High-Speed Atomic Force Microscopy for Patterned Defect Review

An Investigation of Edge Bead Removal Width Variability, Effects and Process Control in Photolithographic Manufacturing

Resist Materials for Extreme Ultraviolet Lithography: Toward Low‐Cost Single‐Digit‐Nanometer Patterning

Understanding Etch Properties of Advanced Chemically Amplified EUV Resist

Photoresist Fabrication for High-NA EUV Lithography: Material and Mechanism

Use of Sacrificial Nanoparticles to Remove the Effects of Shot-noise in Contact Holes Fabricated by E-beam Lithography

Quantitative evaluation of residual resist in electron beam lithography based on scanning electron microscopy imaging and thresholding segmentation algorithm

Rapid prototyping of etch test structures for hard mask development using electron beam lithography

Research on Improvement of CMP Thickness Uniformity Control on Wafer Edge Defocus Defects

Optimized Wafer Edge Condition in Lithographic Process for Peeling Defect Reduction

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Wet cleaning of Ta-based extreme ultraviolet photomasks at room temperature