Abstract:In this study, an effort has been made to gain a thorough knowledge of the phase transformation mechanism of quaternary thin films Cu (In, Ga) Se 2 on FTO-glass substrates through electrochemical impedance spectroscopy (EIS). Here, a methodical strategy that starts with the investigation of unitary (Cu, Se, In and Ga), binary (Cu-In, Cu-Se, Cu-Ga, In-Se, In-Ga, and Se-Ga), tertiary (Cu-In-Se, Cu-In-Ga, In-Se-Ga, and Cu-Se-Ga), and finally quaternary (Cu-In-Ga-Se) deposition has been put forward. CuCl 2 , H 2 SeO 4 , InCl 3 , and GaCl 3 were the salts utilized, and their combinations for each stage of deposition. The information obtained from EIS i.e., solution resistance (R s ), double layer capacitance (C dl ), charge transfer resistance (R ct ), film resistances (R film ), and film capacitances (C film ) were used to find the mechanism. For unitary baths, Cu has the highest R ct and high C dl under the optimized concentration. Binary baths further explained that Se-Ga and In-Ga can be used to perform one stage of deposition considering the low R ct and moderate C dl . The tertiary bath combinations favored CIS as one stage of deposition in a similar manner (i.e., low R ct and C dl ). While using the quaternary bath, R ct and C dl were found to have values of 483.6 Ω.cm 2 and 285.78 μF/cm 2 . From the impedance pattern, it was deduced that the deposition takes place in two layers i.e., CIS and CGS tertiary films which eventually give the quaternary composition. Further, the stability of the films was also evaluated in the Na 2 SO 4 solution, the CIGS film is found to be sufficiently stable.

One‐step DcMS and HiPIMS sputtered CIGS films from a quaternary target

Effects of sputtering voltage and current on the composition and microstructure of the CIGS films prepared by one-step pulsed DC magnetron sputtering

Preparation of Cu(In,Ga)Se2 Thin Film by Sputtering from Cu(In,Ga)Se2 Quaternary Target

One-Step Synthesis of Cu(In,Ga)Se-2 Absorber Layers by Magnetron Sputtering from A Single Quaternary Target

The Relationships Between Electronic Properties and Microstructure of Cu(In,Ga)Se-2 Films Prepared by Sputtering from A Quaternary Target

An electrochemical impedance study to analyse the phase transformation pattern and stability during electro-crystallization of CIGS photo-voltaic thin films

Influence of Bilayer Precursor Films on Structure and Morphology of CIGS Films

Formation of CuInSe2 and Cu(In,Ga)Se2 films by electrodeposition and vacuum annealing treatment

ANNEALING STUDIES ON CIGSE PREPARED BY MAGNETRON SPUTTERING

Growth and Characterization of Copper Indium Gallium Diselenide Films for Solar Cells Fabrication

Effects of Substrate Temperature on the Properties of Cu(In,Ga)Se2 Thin Films Prepared by Sputtering from a Quaternary Target

Research on CuInS2 Thin Films Prepared by One-step Electrodeposition

Research of CIGS Thin Films on Glass Substrates by RF Magnetron Sputtering

Surface evolution of sputtered Cu(In,Ga)Se 2 thin films under various annealing temperatures

Preparation and characterization of Cu(In,Ga)Se2 thin films derived by frequency magnetron sputtering

Preparation And Characterization Of Cu(In,Ga)Se-2 Thin Films By Selenization Of Cu0.8ga0.2 And In2se3 Precursor Films

PROCESS AND PERFORMANCE OF CHALCOPYRITE CIGSe ABSORBERS FABRICATED BY MAGNETRON SPUTTERING

Fabrication of Cu(In,Ga)Se-2 Thin Films from Nanoparticles by Non-Vacuum Mechanochemical Method and Rapid Thermal Annealing Process

10.3%-Efficient Submicron-Thick Cu(In,Ga)Se2 Solar Cells with Absorber Fabricated by Sputtering In2Se3, CuGaSe2 and Cu2Se Targets

Study on Two-Step Process of Preparing CIGS Films

Characterization of Cu(In,Ga)Se2 Films Deposited by Single-Step Electron Beam Evaporation for Solar Cell Applications