Abstract:In this study, an effort has been made to gain a thorough knowledge of the phase transformation mechanism of quaternary thin films Cu (In, Ga) Se 2 on FTO-glass substrates through electrochemical impedance spectroscopy (EIS). Here, a methodical strategy that starts with the investigation of unitary (Cu, Se, In and Ga), binary (Cu-In, Cu-Se, Cu-Ga, In-Se, In-Ga, and Se-Ga), tertiary (Cu-In-Se, Cu-In-Ga, In-Se-Ga, and Cu-Se-Ga), and finally quaternary (Cu-In-Ga-Se) deposition has been put forward. CuCl 2 , H 2 SeO 4 , InCl 3 , and GaCl 3 were the salts utilized, and their combinations for each stage of deposition. The information obtained from EIS i.e., solution resistance (R s ), double layer capacitance (C dl ), charge transfer resistance (R ct ), film resistances (R film ), and film capacitances (C film ) were used to find the mechanism. For unitary baths, Cu has the highest R ct and high C dl under the optimized concentration. Binary baths further explained that Se-Ga and In-Ga can be used to perform one stage of deposition considering the low R ct and moderate C dl . The tertiary bath combinations favored CIS as one stage of deposition in a similar manner (i.e., low R ct and C dl ). While using the quaternary bath, R ct and C dl were found to have values of 483.6 Ω.cm 2 and 285.78 μF/cm 2 . From the impedance pattern, it was deduced that the deposition takes place in two layers i.e., CIS and CGS tertiary films which eventually give the quaternary composition. Further, the stability of the films was also evaluated in the Na 2 SO 4 solution, the CIGS film is found to be sufficiently stable.

Research of CIGS Thin Films on Glass Substrates by RF Magnetron Sputtering

Effect of Substrate Temperature on CIGS Thin Films Prepared by Quarternary Laminating Selenization Proces

Preparation of Cu(In,Ga)Se2 Thin Film by Sputtering from Cu(In,Ga)Se2 Quaternary Target

Growth and Characterization of Copper Indium Gallium Diselenide Films for Solar Cells Fabrication

Formation of CuInSe2 and Cu(In,Ga)Se2 films by electrodeposition and vacuum annealing treatment

Study on Two-Step Process of Preparing CIGS Films

PROCESS AND PERFORMANCE OF CHALCOPYRITE CIGSe ABSORBERS FABRICATED BY MAGNETRON SPUTTERING

ANNEALING STUDIES ON CIGSE PREPARED BY MAGNETRON SPUTTERING

10.3%-Efficient Submicron-Thick Cu(In,Ga)Se2 Solar Cells with Absorber Fabricated by Sputtering In2Se3, CuGaSe2 and Cu2Se Targets

Investigation of Copper Indium Gallium Selenide Material Growth by Selenization of Metallic Precursors

An electrochemical impedance study to analyse the phase transformation pattern and stability during electro-crystallization of CIGS photo-voltaic thin films

An Investigation on Preparation of CIGS Targets by Sintering Process

Effect of the Heat Treatment on the Microstructure and Morphology of Cigs Thin Films Prepared by RF Magnetron Sputtering at Room Temperature

Investigation of Cu(In,Ga)Se2 Polycrystalline Growth: Ga Diffusion and Surface Morphology Evolution

Surface evolution of sputtered Cu(In,Ga)Se 2 thin films under various annealing temperatures

Structures, Optical Absorption and Electrical Properties of Pulsed-Laser-Deposited Cuin0.8ga0.2se2 Thin Films and Their Use in Cigs/Pcbm Photovoltaic Structures

Synthesis and Characterization of CIGS Powder

The Effects of Annealing Temperature on CIGS Solar Cells by Sputtering from Quaternary Target with Se-free Post Annealing

The Effect of Substrate Temperatures on CdS Film Prepared by Thermal Evaporation

Influence of Bilayer Precursor Films on Structure and Morphology of CIGS Films

Effects of Annealing on CuInGaSe2 Solar Cell Prepared by Magnetron Sputtering