Design of a Novel Split – Recessed Gate β – Ga 2 O 3 MOSFET based Maximum Gain Microwave Amplifier

Priyanshi Goyal,Kamlesh Patel,Harsupreet Kaur
DOI: https://doi.org/10.1088/1361-6463/ad520f
2024-06-01
Journal of Physics D Applied Physics
Abstract:In this study, a split recessed gate Ga 2 O 3 MOSFET has been proposed for high frequency applications. Extensive simulations have been carried out using TCAD Silvaco to examine analog characteristics as well as critical high-frequency metrics of the proposed device. A comparison has been drawn with conventional recessed gate β – Ga 2 O 3 MOSFET and it is demonstrated that the proposed device outperforms the conventional device in terms of high frequency metrics due to significantly lower parasitic capacitances and higher intrinsic gain. In addition to this, it has also been demonstrated that proposed device exhibits a substantial increase of 127.7 % in Johnson's figure of merit, significantly higher i.e., 134.7 % higher Baliga's high frequency figure of merit as well as 3.25 % increase in Baliga's figure of merit as compared to conventional device. Furthermore, two port network analysis has been carried out for both the devices and it has been shown that the proposed device offers higher gain with a slight trade-off in the reflections at input/output ports. The scattering parameters have also been extracted and used to perform the stability analysis. It has been observed that the proposed device exhibits higher stability for the entire frequency range. Further, a maximum gain amplifier has been designed using the proposed device. An impressive gain of 11.04 dB has been demonstrated at an ultra-high frequency of 3 GHz.
physics, applied
What problem does this paper attempt to address?