Abstract:Nanowires, due to their unique properties, are emerging as the building blocks of the next-generation electronics industry and will play a critical role in both low- and high-performance circuits and systems. This work presents the design, optimization, and analysis of a silicon (Si) and gallium-nitride nanowire field-effect transistor (GaN NW FET) to evaluate its performance at the ultra-scaled device dimensions required for GaN NW FETs in the electronics industry in order to increase the packing density and overall performance of the device. The analysis was carried out using self-consistent Poisson and Schrödinger equations based on a non-equilibrium Green function (NEGF) approach using Silvaco ATLAS. A reduction of 84.07% in the 'off' current was observed for the GaN NW FET, as compared to its Si counterparts, which reveals the requirement for a GaN NW FET at extremely scaled dimensions for 'off' state leakage suppression. Optimization of the electrostatic control mechanism, gate oxide, gate oxide thickness (tox), and metal work functions (ms) was performed using quantum simulation models to investigate the influence of these parameters on the device performance. A way of improving the Ion/Ioff ratio of the device has been reported using metal contact length and width variations. A 40% reduction in the subthreshold swing value offers improvements in the electrostatic control Ion/Ioff ratio of ~104, ~105, and 102 due to the respective optimizations of the metal contact length (Lc), metal contact width (Wc), and metal work function (ms) of the GaN NW FET, compared to the Si NW FET, thus making the GaN NW FET an intriguing option for digital electronics applications. A comparison of the semi-classical (Drift Diffusion_Mode Space) and quantum (Non-Equilibrium Green Function_Mode Space) transport models was also carried out to reveal the importance of the accuracy of these models at such low dimensions. This optimization and analysis will help us to further improve the performance of experimental work and will act as a reference for the same. This study reveals the performance advantages of the GaN NW FET over the Si NW FET for transistor applications in the electronics industry and can serve as a reference point for the researchers working in this area. To the best of our knowledge, no such comparison has been reported so far for Si and GaN NW FETs using 3 nm technology.

Design and Parametric Analysis of GaN on Silicon High Electron Mobility Transistor for RF Performance Enhancement

Thermal Analysis of AlGaN/GaN High-Electron-Mobility Transistor and Its RF Power Efficiency Optimization with Source-Bridged Field-Plate Structure

Improved analog and AC performance for high frequency linearity based applications using gate-stack dual metal (DM) nanowire (NW) FET (4H-SiC)

Performance Analysis of AlN/GaN HEMTs on β-Ga2O3 Through Exploration of Varied Back Barriers: An Investigative Study for Advanced RF Power Applications

Nanoscale recessed T-gated ScAlN/GaN-HEMT on SiC wafer with graded back-barrier and Fe-doped buffer for future RF power amplifiers: a simulation study

RF Performance Augmentation Using DG-InAlN/GaN HEMT

Design, optimization, and analysis of Si and GaN nanowire FETs for 3 nm technology

Investigation of RF performance of Ku-band GaN HEMT device and an in-depth analysis of short channel effects

Effect of Device Geometry on Static and Dynamic Performance of AlGaN/GaN-on-Si High Electron Mobility Transistor

Small Signal Parameters Extraction and RF Performance of GaN-Based Dual-Metal Cylindrical Surrounding Gate Junctionless Accumulation-Mode (DM-CSG-JAM) MOSFET

Exploration on the impact of barrier thickness, gate recess, and lateral scaling on AlGaN/GaN SRL HEMT on silicon for future RF power electronics

Improving Rf Characteristic and Suppress Gate Leakage in Normally-Off Gan-Hemts Using Negative Polarization Effect and Floating Gate for Millimeter-Wave Systems

Efficacy of Π-Gate in RF Power Performance of Thin GaN Buffer AlGaN/GaN HEMTs

High Performance $0.25\mu\mathrm{m}$ GaN Technology with Low Memory Effects

Performance analysis of InAlN/GaN HEMT and optimization for high frequency applications

A Review of GaN Channel-Based MOSHEMTs for Next-Generation Medium/Low-Voltage Rating and High-Speed RF Power Applications

Large Signal Performance of the Gallium Nitride Heterostructure Field-Effect Transistor With a Graphene Heat-Removal System

The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors

Linearity analysis of III-Nitride/β-Ga2O3 Nano-HEMT for emerging RF/Microwave applications

High RF Performance GaN-on-Si HEMTs With Passivation Implanted Termination