Abstract:There is much current interest in the optical properties of semiconductor nanowires, because the cylindrical geometry and strong two-dimensional confinement of electrons, holes and photons make them particularly attractive as potential building blocks for nanoscale electronics and optoelectronic devices1,2, including lasers3,4and nonlinear optical frequency converters5. Gallium nitride (GaN) is a wide-bandgap semiconductor of much practical interest, because it is widely used in electrically pumped ultraviolet–blue light-emitting diodes, lasers and photodetectors6,7. Recent progress in microfabrication techniques has allowed stimulated emission to be observed from a variety of GaN microstructures and films8,9. Here we report the observation of ultraviolet–blue laser action in single monocrystalline GaN nanowires, using both near-field and far-field optical microscopy to characterize the waveguide mode structure and spectral properties of the radiation at room temperature. The optical microscope images reveal radiation patterns that correlate with axial Fabry–Perot modes (Q ≈ 103) observed in the laser spectrum, which result from the cylindrical cavity geometry of the monocrystalline nanowires. A redshift that is strongly dependent on pump power (45 meV μJ cm−2) supports the idea that the electron–hole plasma mechanism is primarily responsible for the gain at room temperature. This study is a considerable advance towards the realization of electron-injected, nanowire-based ultraviolet–blue coherent light sources.

Observation of optical gain in Er-Doped GaN epilayers

Room-temperature lasing action in GaN quantum wells in the infrared 1.5 micron region

Excitation Mechanisms of Er Optical Centers in GaN Epilayers

Near-infrared Luminescence of Erbium Doped Ga2O3 Films and Devices Based on Silicon: Realization of Energy Transfer

Single gallium nitride nanowire lasers

Optical Engineering of Modal Gain in a III-Nitride Laser with Nanoporous GaN

Surface Emission Of Inxga1-Xn Epilayers Under Strong Optical Excitation

Stimulated Emission and Optical Gain in AlGaN Heterostructures Grown on Bulk AlN Substrates

Observation of Optically-Active Metastable Defects in Undoped Gan Epilayers

Giant optical gain in a single-crystal erbium chloride silicate nanowire

1530-nm electroluminescence from <i>p</i>-Ga<sub>2</sub>S<sub>3</sub>:Er/<i>n<SUP>+</SUP></i>-Si heterojunctions induced by Zener tunneling

Structural and Optical Properties of Gainp Grown on Germanium by Metal-Organic Chemical Vapor Deposition

Gain characteristics of Er 3+-doped phosphate glass fibres

Carrier emission of n-type Gallium Nitride illuminated by femtosecond laser pulses

Optically pumped lasing with a Q-factor exceeding 6000 from wet-etched GaN micro-pyramids

Characterization of GaInN/GaN layers for green emitting laser diodes

Luminescent Properties of Er3+-doped La2O3–Ga2O3 Glass Prepared by Aerodynamic Levitation Technique

Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer

Optical Properties Evolution of GaN Film Grown Via Lateral Epitaxial Overgrowth

Temperature‐dependent Cathodoluminescence Investigation of Er‐implanted GaN Thin Films

Photon Modulated Electroluminescence of Gainn/Gan Multiple Quantum Well Light Emitting Diodes