Abstract:Integrated photonics requires high gain optical materials in the telecom wavelength range for optical amplifiers and coherent light sources. Erbium (Er) containing materials are ideal candidates due to the 1.5 μm emission from Er3+ ions. However, the Er density in typical Er-doped materials is less than 1020 cm–3, thus limiting the maximum optical gain to a few dB/cm, too small to be useful for integrated photonic applications. Er compounds could potentially solve this problem since they contain much higher Er3+ density. So far the existing Er compounds suffer from short lifetime and strong upconversion effects, mainly due to poor crystal qualities. Recently, we explore a new Er compound: erbium chloride silicate (ECS, Er3(SiO4)2Cl) in the form of nanowire, which facilitates the growth of high quality single crystal with relatively large Er3+ density (1.62 × 1022 cm–3). Previous optical results show that the high crystal quality of ECS material leads to a long lifetime up to 1 ms. The Er lifetime-density product was found to be the largest among all the Er containing materials. Pump-probe experiments demonstrated a 644 dB/cm signal enhancement and 30 dB/cm net gain per unit length from a single ECS wire. As a result, such high-gain ECS nanowires can be potentially fabricated into ultra-compact lasers. Even though a single ECS nanowire naturally serves as good waveguide, additional feedback mechanism is needed to form an ultra-compact laser. In this work, we demonstrate the direct fabrication of 1D photonic crystal (PhC) air hole array structure on a single ECS nanowire using focused ion beam (FIB). Transmission measurement shows polarization-dependent stop-band behavior. For transverse electric (TE) polarization, we observed stop-band suppression as much as 12 dB with a 9 μm long airholed structure. Through numerical simulation, we showed that Q-factor as high as 11000 can be achieved at 1.53 μm for a 1D PhC micro-cavity on an ECS nanowire. Such a high Q cavity combined with the high material gain of ECS nanowires provides an attractive solution for ultra-compact lasers, an important goal of this research.

Giant optical gain in a single-crystal erbium chloride silicate nanowire

Record-high Optical Gain in a Single Crystal Erbium Chloride Silicate Nanowire at 1532 Nm

Single-cystal Erbium Chloride Silicate Nanowires with Internal Net Gain Larger Than 300 Db/cm

Single Crystal Erbium Compound Nanowires As High Gain Material for On-Chip Light Source Applications

High-gain Erbium Silicate Waveguide Amplifier and a Low-Threshold, High-Efficiency Laser.

E r silicate nanowire light source for silicon photonics

Optical gain at 1550 nm from colloidal solution of Er3+-Yb 3+ codoped NaYF4 nanocubes

Giant Raman gain in silicon nanocrystals

Toward a10 dB net-gain waveguide amplifier in an Er3+-Yb3+ co-doped phosphate glass

A photonic integrated circuit based erbium-doped amplifier

Toward a 10 Db Net-Gain Waveguide Amplifier in an Er3+-Yb3+ Co-Doped Phosphate Glass

Optical gain and lasing from bulk cadmium sulfide nanocrystals through bandgap renormalization

A photonic integrated circuit–based erbium-doped amplifier

Net gain in C+L band from LED pumped broadband emission in Er3+-doped oxyhalide tellurite glass

A low-fabrication-temperature, high-gain chip-scale waveguide amplifier

Erbium-doped Lithium Niobate on Insulator Waveguide Amplifier with Ultra-High Internal Net Gain of 38 Db

Broadband near-infrared emission in Bi-Tm co-doped germanium silicate glasses

Super-gain nanostructure with self-assembled well-wire complex energy-band engineering for high performance of tunable laser diodes

Room-temperature Near-Infrared Up-Conversion Lasing in Single-Crystal Er-Y Chloride Silicate Nanowires

Theoretical study on on-chip gain characteristics of Er 3+ in LiNbO 3 -on-insulator photonic wire pumped at 980 nm wavelength

Erbium-ytterbium codoped thin-film lithium niobate integrated waveguide amplifier with 27 dB internal net gain