Abstract:Integrated photonics requires high gain optical materials in the telecom wavelength range for optical amplifiers and coherent light sources. Erbium (Er) containing materials are ideal candidates due to the 1.5 μm emission from Er3+ ions. However, the Er density in typical Er-doped materials is less than 1020 cm–3, thus limiting the maximum optical gain to a few dB/cm, too small to be useful for integrated photonic applications. Er compounds could potentially solve this problem since they contain much higher Er3+ density. So far the existing Er compounds suffer from short lifetime and strong upconversion effects, mainly due to poor crystal qualities. Recently, we explore a new Er compound: erbium chloride silicate (ECS, Er3(SiO4)2Cl) in the form of nanowire, which facilitates the growth of high quality single crystal with relatively large Er3+ density (1.62 × 1022 cm–3). Previous optical results show that the high crystal quality of ECS material leads to a long lifetime up to 1 ms. The Er lifetime-density product was found to be the largest among all the Er containing materials. Pump-probe experiments demonstrated a 644 dB/cm signal enhancement and 30 dB/cm net gain per unit length from a single ECS wire. As a result, such high-gain ECS nanowires can be potentially fabricated into ultra-compact lasers. Even though a single ECS nanowire naturally serves as good waveguide, additional feedback mechanism is needed to form an ultra-compact laser. In this work, we demonstrate the direct fabrication of 1D photonic crystal (PhC) air hole array structure on a single ECS nanowire using focused ion beam (FIB). Transmission measurement shows polarization-dependent stop-band behavior. For transverse electric (TE) polarization, we observed stop-band suppression as much as 12 dB with a 9 μm long airholed structure. Through numerical simulation, we showed that Q-factor as high as 11000 can be achieved at 1.53 μm for a 1D PhC micro-cavity on an ECS nanowire. Such a high Q cavity combined with the high material gain of ECS nanowires provides an attractive solution for ultra-compact lasers, an important goal of this research.

Record-high Optical Gain in a Single Crystal Erbium Chloride Silicate Nanowire at 1532 Nm

Single-cystal Erbium Chloride Silicate Nanowires with Internal Net Gain Larger Than 300 Db/cm

Giant optical gain in a single-crystal erbium chloride silicate nanowire

Single Crystal Erbium Compound Nanowires As High Gain Material for On-Chip Light Source Applications

Optical gain at 1550 nm from colloidal solution of Er3+-Yb 3+ codoped NaYF4 nanocubes

High-gain Erbium Silicate Waveguide Amplifier and a Low-Threshold, High-Efficiency Laser.

E r silicate nanowire light source for silicon photonics

Erbium-doped Lithium Niobate on Insulator Waveguide Amplifier with Ultra-High Internal Net Gain of 38 Db

Preparation of Er:YAG Crystal-Derived All-Glass Silica Fibers For a 1550-nm Single-Frequency Laser

Room-temperature Near-Infrared Up-Conversion Lasing in Single-Crystal Er-Y Chloride Silicate Nanowires

High on-chip gain spiral Al2O3:Er3+ waveguide amplifiers

Broadband Optical Amplification in Silicate Glass-Ceramic Containing Beta-Ga2o3 : Ni2+ Nanocrystals

Fabrication Of 1d Photonic Crystal On A Single Erbium Chloride Silicate Nanowire And Microcavity Laser Design

Confinement Effect and Low-Defect Density-Induced Long Lifetime Er Silicate Nanowire Embedded in Silicon Oxide Film.

Toward a10 dB net-gain waveguide amplifier in an Er3+-Yb3+ co-doped phosphate glass

Toward a 10 Db Net-Gain Waveguide Amplifier in an Er3+-Yb3+ Co-Doped Phosphate Glass

Optical Amplification in Er/Yb Silicate Strip Loaded Waveguide

A low-fabrication-temperature, high-gain chip-scale waveguide amplifier

Er-doped silicate fiber amplifiers in the L-band with flat gain

Net gain in C+L band from LED pumped broadband emission in Er3+-doped oxyhalide tellurite glass

1550-Nm Light Amplification from Erbium-Doped Silica Glass Waveguide Written by Femtosecond Laser Pulses