Abstract:There is much current interest in the optical properties of semiconductor nanowires, because the cylindrical geometry and strong two-dimensional confinement of electrons, holes and photons make them particularly attractive as potential building blocks for nanoscale electronics and optoelectronic devices1,2, including lasers3,4and nonlinear optical frequency converters5. Gallium nitride (GaN) is a wide-bandgap semiconductor of much practical interest, because it is widely used in electrically pumped ultraviolet–blue light-emitting diodes, lasers and photodetectors6,7. Recent progress in microfabrication techniques has allowed stimulated emission to be observed from a variety of GaN microstructures and films8,9. Here we report the observation of ultraviolet–blue laser action in single monocrystalline GaN nanowires, using both near-field and far-field optical microscopy to characterize the waveguide mode structure and spectral properties of the radiation at room temperature. The optical microscope images reveal radiation patterns that correlate with axial Fabry–Perot modes (Q ≈ 103) observed in the laser spectrum, which result from the cylindrical cavity geometry of the monocrystalline nanowires. A redshift that is strongly dependent on pump power (45 meV μJ cm−2) supports the idea that the electron–hole plasma mechanism is primarily responsible for the gain at room temperature. This study is a considerable advance towards the realization of electron-injected, nanowire-based ultraviolet–blue coherent light sources.

Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature

Confinement of Excitons within GaN 1D Nanoarchitectures Formed on AlN Molecular Steps

Room-Temperature Bound Exciton with Long Lifetime in Monolayer GaN

Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure

Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy

Ultrafast Dynamics of Exciton Formation in Semiconductor Nanowires

Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters

Exciton states and optical transitions in InGaN/GaN quantum dot nanowire heterostructures: Strong built-in electric field and dielectric mismatch effects

Single photon emitters in thin GaAsN nanowire tubes grown on Si

Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics

Experimental Observation of Strong Exciton Effects in Graphene Nanoribbons

Single gallium nitride nanowire lasers

Spectroscopic characterizations of individual single-crystalline GaN nanowires in visible/ultra-violet regime.

Electrical control of excitons in GaN/(Al,Ga)N quantum wells

Correlated electro-optical and structural study of electrically tunable nanowire quantum dot emitters

Room-temperature quantum emission from interface excitons in mixed-dimensional heterostructures

Acoustically regulated optical emission dynamics from quantum dot-like emission centers in GaN/InGaN nanowire heterostructures

The inherently absent 2-dimensional electron gas in ultra-pure GaN/AlGaN heterostructures

Nanoscale confinement and control of excitonic complexes in a monolayer WSe2

Scaling Nanowire-Supported GaN Quantum Dots to the Sub-10 nm Limit, Yielding Complete Suppression of the Giant Built-in Potential