The application of IGBT in laser power

Hu Xiao

Abstract:Switch onoff pulse laser power with IGBT as power inversion device is developed,which eliminates the weakness of thyristor as power inversion device in the past .Resonant current zero passage turnoff mood is applied in its main circuit which solve the problem of device damage fundamentally.

Physics,Engineering

What problem does this paper attempt to address?

A Novel Single Power-Supply IGBT Driver Circuit

CHEN Zhen-wei,CHEN Hui-ming,WANG Zheng-shi,LIU Lei

DOI: https://doi.org/10.3969/j.issn.1001-4551.2007.09.011

2007-01-01

Abstract:By analyzing the advantage and disadvantage of some typical IGBT driver circuits,a novel driver circuit to fulfill the requirements of IGBT drivers was presented.Isolated by a transformer,the new circuit used a single power-supply to generate negative gate voltage.It provided two pulse-width programmable driving signal without any floating power-supplies.The experiment gives experimental waveform,the experinent results are also given to indicate the advantage such as simplicity and reliability of the new circuit.
100Khz High Frequency Induction Heating Power Supply Based on IGBT

Huiming Chen

IF: 5.967

2006-01-01

IEEE Transactions on Power Electronics

Abstract:In this paper,the authors describe briefly the advantages and disadvantages of the current and voltage fed inverter for induction heating power supply.A 100kHz/30kW current-fed inverter using IGBT modules is developed,the main circuit design and control are discussed,and the experimental results are also given.
Research on Ultra High Frequency Induction Heating Power Supply Inverter Load Topology

岳金伟,陈辉明,王正仕

DOI: https://doi.org/10.3969/j.issn.1001-4551.2010.06.018

2010-01-01

Abstract:Aiming at the troublesome of the switching loss and induction heating load variation in ultra high frequency induction heating power supply inverter,a novel bi-switching ultra high frequency resonant inverter was introduced.In the circuit,the trail inductive and capacitive parasitic parameters can be absorbed.The zero-voltage turn-off and the zero-voltage,zero-current turn-on were realized,in which the switching loss of the switch tube can be reduced greatly.The working conditions of the topology in inductive,resistive and capacitive load were analyzed.At the same time,the scope and conditions of the zero-voltage soft-switching in four kinds of classical inverter load were researched.Simulation and experimental results operating around 1 MHz frequency were presented.The results indicate that LLC inverter load topology is the most suitable one for this inverter.
Full-bridge Zero Voltage Switching Transition(ZVT) Converter in Pulse Laser Power Supply

Zhi Yang

IF: 5.967

2002-01-01

IEEE Transactions on Power Electronics

Abstract:Taking a 9kW (peak power)full bridge ZVT pulse laser power supply with IGBT for example,this paper discusses and demonstrates the stratgies for realizing zero voltage soft switching at extreme load conditions,i.e.short circuit and open circuit conditions.
The trench Insulated Gate Bipolar Transistor— a high power switching device

Florin Udrea,Gehan Amaratunga

DOI: https://doi.org/10.1016/S0026-2692(96)00058-4

IF: 1.992

1997-01-01

Microelectronics Journal

Abstract:This paper presents a consistent theoretical study of the Trench Insulated Gate Bipolar Transistor (TIGBT). Specific on-state physical and geometrical effects, such as accumulation layer injection, increased channel density, increased channel charge and transversal electric field modulation are discussed. The potential advantages of the Trench IGBT over its conventional planar variant are highlighted. Key issues such as safe operating area and breakdown termination techniques are discussed for the first time. It is concluded that the Trench IGBT is one of the most promising structures in the area of high voltage MOS-controllable swirching devices.
Characteristics Of Trench Gate And Dmos Igbts In A Zcs Single-Ended Resonant Inverter

d i m de silva,n k shrestha,p r palmer,f udrea,g a j amaratunga,d chamund,l coulbeck,p waind

DOI: https://doi.org/10.1109/SMELEC.2002.1217781

2002-01-01

Abstract:The Trench Insulated Gate Bipolar Transistor (IGBT) is widely regarded as a better power switching device over the DMOS IGBT in a wide range of conventional switching applications such as motor control and power conditioning for HVDC. It is also important to study the behaviour of Trench IGBTs in applications where resonant switching has inherent advantages over hard switching. A comparison of performance of the DMOS and Trench IGBT in a Zero Current Switching (ZCS) single-ended resonant inverter suitable for industrial induction cookers is presented. As the IGBTs switch at zero current in ZCS circuits, turn-on, reverse recovery and forward recovery losses are minimal compared to the conduction losses. The study is performed using the circuit simulator PSpice, two-dimensional numerical simulator MEDICI and an experimental test rig. It is concluded that the Trench gate IGBT with its lower on state voltage and lower on resistance shows better performance, particularly at high switching frequencies and high currents, over the DMOS IGBT in zero current switching resonant circuits.
Improved Switching Loss Calculation in Neutral Point Clamped Inverter Via Waveforms Linearization

Hongyang Liu,Jiong Ma,Hao Ma,Zhihong Bai

DOI: https://doi.org/10.1109/isie.2013.6563632

2013-01-01

Abstract:An improved switching loss calculation method for IGBT switching on, switching off and the diode reverse recovery energy losses in neutral point clamped inverter is proposed in this paper. A model of linear instantaneous switching on and off waveforms is presented to approximate actual switching process. The IGBT switching on and off duration, the changing rates of current di/dt and collector-emitter voltage dv/dt all can be calculated at different load currents with the given IGBT parameters. Besides, the proposed method is apparently different from the linear waveform method used before which assuming switching time to be a constant value. In addition, compared with the traditional mathematical equation that uses measured data to fit a formula, the equation proposed here is based on physical model and it can indicate the relationship between gate drive resistor, the IGBT capacitance, trans-conductance and switching process. An inverter employing a switching pattern as sinusoidal PWM (SPWM) was designed and experiment was carried out to test the switching waveforms under different output currents. Switching loss under different currents was also measured and compared with calculated value using mathematical equation proposed in this paper.
Trench Gate IGBTs for Zero Current Switching Applications

DIM de Silva,NK Shrestha,R Azar,GAJ Amaratunga,F Udrea,PR Palmer,D Chamund,L Coulbeck,P Waind

DOI: https://doi.org/10.1109/apec.2003.1179328

2003-01-01

Abstract:This paper reports on the behaviour of trench IGBTs in comparison with equivalent DMOS IGBTs in zero current switching converters. Extensive experimental results backed up by accurate Spice modelling are presented. These results indicate the superior performance of Trench IGBTs particularly at high switching frequencies, currents and junction temperatures in resonant applications.
Characterising Trench Igbts in Resonant Switching Using Single Ended and Half-Bridge Application Circuits

DIM de Silva,NK Shrestha,PR Palmer,F Udrea,GAJ Amaratunga,D Chamund,L Coulbeck,P Waind

DOI: https://doi.org/10.1109/peds.2003.1282679

2003-01-01

Abstract:This paper reports the behaviour of a new class of 1.2kV, 25A NPT Trench gate IGBT in Zero Current Switching (ZCS) and Zero Voltage Switching (ZVS) and compares its performance with an equivalent state-of the-art DMOS IGBT. Two low-medium power application circuits are used as test circuits for characterisation. With its superior on-state modulation characteristics the Trench IGBT shows better performance during conduction, particularly at high frequencies and high currents. However in the ZVS mode turn-off losses should be minimised by optimising circuit parameters in order to utilise the on-state performance advantage of the Trench IGBT.
Optimum design of 1.4 kV trench IGBTs-the next generation of high power switching devices

t trajkovic,p waind,j thomson,f udrea,x yuan,sheng huang,w i milne,g a j amaratunga,d e crees

DOI: https://doi.org/10.1049/ic:19990599

1999-01-01

Abstract:The trench insulated gate bipolar transistor (IGBT) is the most promising structure for the next generation of power semiconductor devices with wide applications ranging from motor control (1.4 kV) to HVDC (6.5 kV). Here, the authors present, for the first time, an optimum design of a 1.4 kV trench IGBT using a new, fully integrated, optimisation system comprising process and device simulators and the RSM optimiser. The use of this new TCAD system has contributed largely to realizing devices with characteristics far superior to the previous DMOS generation of IGBTs. Full experimental results on 1.4 kV trench IGBTs which are in excellent agreement with the TCAD predictions are reported.
A Novel Multi-stage IGBT Driving Method

Xin-yu LI,Lu SHU,Jun-ming ZHANG

2017-01-01

Abstract:The insulated gate bipolar transistor (IGBT) are widely used in many medium to high power conversion system,but the high voltage and current overshot of IGBT during switching transient will cause high electromagnetic interference(EMI) noise and destroy IGBT.This paper presents a new multi-stage IGBT driving method,comparing to the conventional IGBT gate driving method,this method can reduce the switching time and the switching loss.
Performance Compare and Test for Trenchstop and NPT IGBT

李平,唐勇,程勤玙

DOI: https://doi.org/10.3969/j.issn.1000-100x.2008.12.008

2008-01-01

Abstract:IGBT is increasingly becoming the preferred switching device in modern power electronic applications,especial-ly the invention of trenchstop IGBT has the revolutionary influence.This paper introduces the development of IGBT,com-pares the new generation Trenchstop IGBT with the NPT IGBT which is widely used.At last experiments are carried on for testing the performance of two kinds of IGBT under same current and voltage grade.Experimental results show Trench-stop IGBT has many excellent performances such as low on-state voltage and less turn-off power loss.
Optimum Design of 1.4kv Non-Punch-Through Trench Igbts: the Next Generation of High-Power Switching Devices

T Trajkovic,F Udrea,PR Waind,J Thomson,GAJ Amaratunga,WI Milne

DOI: https://doi.org/10.1049/ip-cds:20010165

2001-01-01

Abstract:The trench insulated gate bipolar transistor (IGBT) is widely regarded as a worthy replacement of DMOS IGBTs and GTO thyristors in a wide range of applications, from motor control (1.4kV) to HVDC (6.5kV). An optimum design of 1.4kV N-PT trench IGBTs using a new fully integrated optimisation system comprised of process and device simulators and an RSM optimiser is described. The use of this new TCAD system has contributed largely to realising devices with characteristics far superior to the previous DMOS generation of IGBTs. Full experimental results on 1.4kV trench IGBTs are reported, which are in excellent agreement with the TCAD predictions.
Analysis of Double Trench Insulated Gate Bipolar Transistor

Q HUANG,GAJ AMARATUNGA

DOI: https://doi.org/10.1016/0038-1101(94)00110-2

IF: 1.916

1995-01-01

Solid-State Electronics

Abstract:Numerical simulation is used to analyse a novel Double Trench Insulated Gate Bipolar Transistor (DT-IGBT) structure. It has been found that the DT-IGBT structure can be used to achieve a switching loss similar to that of the power MOSFET transistors. These results are encouraging for the development of DT-IGBT type devices as the next generation of IGBTs for the high frequency, high power applications.
A Load Adaptive Intelligent IGBT Gate Drive

Guangyao Zhang,B. Junming Zhang,Shuai Shao,Wanyuan Qu

DOI: https://doi.org/10.23919/icpe2023-ecceasia54778.2023.10213896

2023-01-01

Abstract:Insulated gate bipolar transistor (IGBT) is widely used in high power electronics converters as the key devices. The reliability and efficiency of converters are highly related to the IGBTs. For converters with various loads and inverters whose transient power changes periodically, when the load current is high, the IGBT switching stresses are high due to the parasitic parameters. Thus, the switching speed should be controlled. But the switching stresses are low under light load, and the same switching stresses control method will lead to high switching losses, decreasing the converter efficiency. To solve the problem, this paper proposed a closed loop active gate drive based on adaptive control. The feedback parameter is adaptive to the load current to optimize the IGBT switching losses under various loads. Thus, the converter reliability and efficiency are both improved. And then a 5kW Buck converter prototype is built to verify the theoretical analysis.
The Advantages and Applications of IGBT Compared with Conventional BJT and MOSFET

Xibin He

DOI: https://doi.org/10.1088/1742-6596/2386/1/012054

2022-12-01

Journal of Physics: Conference Series

Abstract:Abstract Nowadays, the power semiconductor devices have been used in many fields like wind power generation systems, the rail transit. Bipolar junction transistors (BJTs) and metal-oxide-semiconductor field-effect transistors (MOSFETs) as well as some other devices are the dominating the market. The insulated gate bipolar transistor (IGBT) as a mixed device of the BJT and the MOSFET, has a preeminent performance. In this paper, the characteristics of the punch through IGBT (PT-IGBT), the MOSFET and the BJT will be investigated by TCAD. Then the PT-IGBT is compared with the BJT and the MOSFET, for concluding its advantages. According to the simulation result, the PT-IGBT has the on-state current of 9*10-4A and the forward blocking voltage of 1200V, which are much higher than the other two devices. In the end of the paper, the development of the semiconductor devices is predicted, about the research trends.
Advanced Active Gate Drive for Switching Performance Improvement and Overvoltage Protection of High-Power IGBTs

Fan Zhang,Xu Yang,Yu Ren,Lei Feng,Wenjie Chen,Yunqing Pei

DOI: https://doi.org/10.1109/tpel.2017.2716370

IF: 5.967

2018-01-01

IEEE Transactions on Power Electronics

Abstract:This paper presents a new active gate drive (AGD) for switching performance improvement and overvoltage protection of high-power insulated gate bipolar transistors (IGBTs). In addition to the conventional gate drive (CGD) based on fixed voltage sources and fixed gate drive resistors, the proposed AGD has a complementary current source to provide extra gate drive current into the gate. Specific transient switching stages of the IGBT can be therefore accelerated, leading to higher switching speed and lower switching loss of the IGBT. Additionally, the turn-off voltage overshoot of the IGBT can be controlled at a preset reference value with a fast closed-loop overvoltage protection circuit. Moreover, the switching speed of the IGBT, including the turn-on/off delay times and the turn-on/off voltage slopes, can be effectively regulated with an adaptive switching speed control method. Accordingly, the gate drive is capable of operating the IGBT at specified delay times and fixed voltage slopes when varying the switching conditions (e.g., temperature, load current). The operation principle of the proposed AGD and control concept are presented. By comparing with the CGD, the proposed method is experimentally verified on a 3.3 kV/1.5 kA IGBT module in both double-pulse and multipulse tests.
A voltage controlled current source gate drive method for IGBT devices

Lu Shu,Junming Zhang,Fangzheng Peng,Zhiqian Chen

DOI: https://doi.org/10.1109/ECCE.2014.6954158

2014-01-01

Abstract:To reduce the power dissipation and switching stress of high power IGBTs during switching transient, a new active gate drive method based on voltage controlled current source (VCCS) is proposed in this paper. Compared to the conventional gate drive (CGD) for IGBTs, the proposed current source gate drive (CSD) method achieves faster switching speed and effective control on current overshoot at turn-on and voltage overshoot at turn-off. Thus the capacity utilization of IGBT devices can be improved. The detailed operation principle of the proposed CSD method is presented, and the experiment results based on a 1200V/200A IGBT module are also provided.
1.4 kV, 25 A, PT and NPT trench IGBTs with optimum forward characteristics

f udrea,p waind,j o thomson,t trajkovic,s s m chan,syruen huang,g a j amaratunga

DOI: https://doi.org/10.1109/ISPSD.1999.764082

1999-01-01

Abstract:In this paper, we report the development of 1.4 kV 25 A punch-through (PT) and nonpunch-through (NPT) trench IGBTs with ultra-low on-resistance, latch-up free operation and highly superior overall performance when compared to previously reported DMOS IGBTs in the same class. We have fabricated both PT and transparent anode NPT devices to cover a wide range of applications which require very low on-state losses or very fast time with ultra-low switching losses. The minimum forward voltage drop at the standard current density of 100 A/cm 2 was 1.1 V for PT nonirradiated devices and 2.1 V for 16 MRad PT irradiated devices. The nonirradiated transparent emitter NPT structure has a typical forward voltage drop of 2.2 V, a turn-off time below 100 ns and turn-off energy losses of 11.2 mW/cm2 at 125 C. The maximum controllable current density was in excess of 1000 A/cm 2
Silicon MOS Controlled Bipolar Power Switching Devices Using Trench Technology

T Trajkovic,F Udrea,Gaj Amaratunga,Wi Milne,Ssm Chan,Pr Waind,J Thomson,De Crees

DOI: https://doi.org/10.1080/002072199132716

1999-01-01

International Journal of Electronics

Abstract:The next generation of power devices are likely to extend MOS controlled bipolar (MCB) device concepts to cover very high voltage (up to 8kV) applications. Such devices will be based on utilizing the advantages brought about by trench gate MOSFETs to control bipolar current flow. In this paper we give a review of development of trench gate IGBTs and we describe briefly new promising device structures based on trench technology which use PIN diode and thyristor type carrier distributions to reduce power losses within the device.

The application of IGBT in laser power

A Novel Single Power-Supply IGBT Driver Circuit

100Khz High Frequency Induction Heating Power Supply Based on IGBT

Research on Ultra High Frequency Induction Heating Power Supply Inverter Load Topology

Full-bridge Zero Voltage Switching Transition(ZVT) Converter in Pulse Laser Power Supply

The trench Insulated Gate Bipolar Transistor— a high power switching device

Characteristics Of Trench Gate And Dmos Igbts In A Zcs Single-Ended Resonant Inverter

Improved Switching Loss Calculation in Neutral Point Clamped Inverter Via Waveforms Linearization

Trench Gate IGBTs for Zero Current Switching Applications

Characterising Trench Igbts in Resonant Switching Using Single Ended and Half-Bridge Application Circuits

Optimum design of 1.4 kV trench IGBTs-the next generation of high power switching devices

A Novel Multi-stage IGBT Driving Method

Performance Compare and Test for Trenchstop and NPT IGBT

Optimum Design of 1.4kv Non-Punch-Through Trench Igbts: the Next Generation of High-Power Switching Devices

Analysis of Double Trench Insulated Gate Bipolar Transistor

A Load Adaptive Intelligent IGBT Gate Drive

The Advantages and Applications of IGBT Compared with Conventional BJT and MOSFET

Advanced Active Gate Drive for Switching Performance Improvement and Overvoltage Protection of High-Power IGBTs

A voltage controlled current source gate drive method for IGBT devices

1.4 kV, 25 A, PT and NPT trench IGBTs with optimum forward characteristics

Silicon MOS Controlled Bipolar Power Switching Devices Using Trench Technology