Abstract:This work reports an approach to study complementary pairs of bipolar junction transistors, often used in push-pull circuits typically found at the output stages of operational amplifiers. After the data is acquired and pre-processed, an Early modeling approach is applied to estimate the two respective parameters (the Early voltage $V_a$ and the proportionality parameter $s$). A voting procedure, inspired on the Hough transform image analysis method, is adopted to improve the identification of $V_a$. Analytical relationships are derived between the traditional parameters current gain ($\beta$) and output resistance ($R_o$) and the two Early parameters. It is shown that $\beta$ tends to increase with $s$ for fixed $V_a$, while $R_o$ depends only on $V_a$, varying linearly with this parameter. Several interesting results are obtained with respect to 7 pairs of complementary BJTs, each represented by 10 samples. First, we have that the considered BJTs occupy a restricted band along the Early parameter space, and also that the NPN and PNP groups are mostly segregated into two respective regions in this space. In addition, PNP devices tended to present an intrinsically larger parameter variation. The NPN group tended to have higher $V_a$ magnitude and smaller $s$ than PNP devices. NPN transistors yielded comparable $\beta$ and larger $R_o$ than PNP transistors. A pattern recognition method was employed to obtain a linear separatrix between the NPN and PNP groups in the Early space and the respective average parameters were used to estimate respective prototype devices. Two complementary pairs of the real-world BJTs with large and small parameters differences were used in three configurations of push pull circuits, and the respective total harmonic distortions were measured and discussed, indicating a definite influence of parameter matching on the results.

Complementary Metal-Oxide-Semiconductor Field Effect Transistor Circuits

An Early Model of Transistors and Circuits

Field-effect BJT: an adaptive and multifunctional nanoscale transistor

Numerical investigation on thermal characteristics of BJTs under the impact of an EMP

An Overview on Bipolar Junction Transistor as a Sensor for X-ray Beams Used in Medical Diagnosis

CMOS Compatible 250 V Lateral Insulated Base Transistors

A JFET-BJT combination for instrumentation applications

A Multifunctional Sub-10nm Transistor

Ion bipolar junction transistors

Characterizing Complementary Bipolar Junction Transistors by Early Modelling, Image Analysis, and Pattern Recognition

Bipolar Transistor Tester / Digital IC Tester for Physics Lab

Two-dimensional material-based complementary ambipolar field-effect transistors with ohmic-like contacts

Numerical and Experimental Investigation on Bipolar Operation of 4H-SIC Normally-on Vertical JFETs

A Network Topological Approach-Based Transient 3-D Electrothermal Model of Insulated-Gate Bipolar Transistor

Discussion on a Common Emitter Amplifier of Bipolar Junction Transistor

Analysis of CMOS-compatible Lateral Insulated Base Transistors

The SCC BJT: a high-performance bipolar transistor compatible with high-density deep-submicrometer BiCMOS SRAM technologies

Novel 4H-SiC bipolar junction transistor (BJT) with improved current gain

Static and dynamic characterization of silicon carbide bipolar junction transistor

Design of BJT-JFET Operational Amplifiers on the Master Slice Array

A Compact Model for Carbon Nanotube Field Effect Transistors Incorporating Temperature Effects and Application for Operational Amplifier Design