Abstract:Analytical model of dielectric modulated trench dual gate junction less field effect transistor (DM_TDJLFET) for biosensing applications is used for the label free detection of bio molecules. The structure of DM-TDGJLFET has two gates which are placed vertical in separated trenches. Threshold voltage sensitivity of neutral as well as charged biomolecules are being studied by this model. Analytical modeling of dual gate and nanowire junction less is used for theoretical analysis off junction less ion sensitive field effect transistor. This FET is used to get the output of nanowire and planar dual gate JLISFET with respect to pH for all regions of operations. This topology successfully brings about designated retention time with larger physical barrier thickness and wider barrier offset length caused by the reduction in band to band tunneling and recombination performance of GaAs and GaSb dual gate junction less metal oxide semiconductor FET is used for the study of high performance switching applications GaAs gallium arsenide is a III-V direct bandgap semiconductor with a zinc blende crystal structure devices. It results a higher leakage power description in both channel materials and low intrinsic delay for thicker layers caused by a substitution amount of energy drop for the predictive analytic model of negative capacitance affect in long channel dual gate junction less transistor. It is based on charge model. The negative capacitance minimizes short channel effects and improves current driving capability, enables both low power operation and more effective transistor size scaling. The sensitivity analysis of negative capacitance junction less transistor is developed in the view of variation in device parameters and the performance with conventional JL devices with TCAD-based investigation of dual gate junction less transistor is used for visualizing the sensitivity of the device against light intensity.

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