Abstract:Oxygen vacancies are engineered in sputter‐deposited HfO2 films by regulating the phase and self‐assembled nanochannels with varying substrate temperature and subsequently enhance the control over conductive filament dynamics. The oxygen vacancy concentration is found to be maximum at 300 °C through the evolution of monoclinic phase, enabling stable multilevel resistive switching behavior in Pt/HfO2/Ag devices for neuromorphic applications. A resistive switching device with precise control over the formation of conductive filaments (CF) holds immense potential for high‐density memory arrays and atomic‐scale in‐memory computing architectures. While ion migration and electrochemical switching mechanisms are well understood, controlling the evolution of CF remains challenging for practical resistive random‐access memory (RRAM) deployment. This study introduces a systematic approach to modulate oxygen vacancies (OV) in HfO2 films of Ag/HfO2/Pt‐based RRAM devices by controlling the substrate temperature. At 300 °C, the HfO2 film exhibits a dominant monoclinic phase with maximum OV concentration, which plays a key role in achieving optimal multilevel resistive switching behavior. Self‐assembled nanochannels in the HfO2 films guide CF evolution, and the diffusion of Ag at inside these films suggests a synergistic interplay between OV and Ag+ ion migration for reseting the voltage‐controlled resistive states. This approach addresses the endurance/retention trade‐off with an impressive Ron/Roff ratio of ≈8000 while demonstrating growth temperature‐driven OV modulation as a tool for multi‐bit data storage. These findings provide a blueprint for developing high‐performance oxide‐based RRAM devices and offer valuable insights into multilevel resistive switching mechanisms, paving the way for future low‐power, high‐density memory technologies.

Electroforming-Free HfO 2 :CeO 2 Vertically Aligned Nanocomposite Memristors with Anisotropic Dielectric Response

CeO 2 -Doped Hf 0.5 Zr 0.5 O 2 Ferroelectrics for High Endurance Embedded Memory Applications

Integration of CeO 2 -Based Memristor with Vertically Aligned Nanocomposite Thin Film: Enabling Selective Conductive Filament Formation for High-Performance Electronic Synapses

Forming and Compliance-free Operation of Low-energy, Fast-switching HfO$_x$S$_y$/HfS$_2$ Memristors

Threshold Switching in Forming-Free Anodic Memristors Grown on Hf-Nb Combinatorial Thin-Film Alloys

Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging

Thin-film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity

Creating Ferroelectricity in Monoclinic ( HfO2 )1 / ( CeO2 )1 Superlattices

HfO2 Thin Films by Chemical Beam Vapor Deposition for Large Resistive Switching Memristors

Creating Ferroelectricity in Monoclinic (HfO_{2})_{1}/(CeO_{2})_{1} Superlattices.

Resistive Switching in Atomic Layer Deposited HfO2/ZrO2 Nanolayer Stacks

Multilevel Resistive Switching Dynamics by Controlling Phase and Self‐Assembled Nanochannels in HfO2

Transparent HfO x -based memristor with robust flexibility and synapse characteristics by interfacial control of oxygen vacancies movement

Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films and Their Implementations in Memristors for Brain‐Inspired Computing

Facile Hydrothermal Synthesis and Resistive Switching Mechanism of the α-Fe2O3 Memristor

Resistive switching behaviour of highly epitaxial CeO2 thin film for memory application

Three‐Dimensional Reconstruction of Conductive Filaments in HfOx‐Based Memristor

Effect of Al2O3 Insertion Layer on Ferroelectricity in HfO2/ZrO2 Nanolaminates

Integration of CeO2-Based Memristor with Vertically Aligned Nanocomposite Thin Film: Enabling Selective Conductive Filament Formation for High-Performance Electronic Synapses

A Forming-Free Bipolar Resistive Switching in HfOx-Based Memory with a Thin Ti Cap

Engineering ferroelectricity in monoclinic hafnia