Thin-film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity

Markus Hellenbrand,Babak Bakhit,Hongyi Dou,Ming Xiao,Megan O Hill,Zhuotong Sun,Adnan Mehonic,Aiping Chen,Quanxi Jia,Haiyan Wang,Judith L MacManus-Driscoll,Megan O. Hill,Judith L. MacManus-Driscoll

DOI: https://doi.org/10.1126/sciadv.adg1946

IF: 13.6

2023-06-23

Science Advances

Abstract:A design concept of phase-separated amorphous nanocomposite thin films is presented that realizes interfacial resistive switching (RS) in hafnium oxide–based devices. The films are formed by incorporating an average of 7% Ba into hafnium oxide during pulsed laser deposition at temperatures ≤400°C. The added Ba prevents the films from crystallizing and leads to ∼20-nm-thin films consisting of an amorphous HfO x host matrix interspersed with ∼2-nm-wide, ∼5-to-10-nm-pitch Ba-rich amorphous nanocolumns penetrating approximately two-thirds through the films. This restricts the RS to an interfacial Schottky-like energy barrier whose magnitude is tuned by ionic migration under an applied electric field. Resulting devices achieve stable cycle-to-cycle, device-to-device, and sample-to-sample reproducibility with a measured switching endurance of ≥10 4 cycles for a memory window ≥10 at switching voltages of ±2 V. Each device can be set to multiple intermediate resistance states, which enables synaptic spike-timing–dependent plasticity. The presented concept unlocks additional design variables for RS devices.

multidisciplinary sciences