Abstract:Due to structural imperfection and indium content fluctuation, carriers' localization in an InGaN-based active layer can produce efficient luminescence and unusual thermodynamic behaviors. Spectral features associated with localization, such as the "S-shaped" shift of peak energy in temperature-dependent photoluminescence (PL) and the nonexponential decay in time-resolved photoluminescence (TRPL), have not yet formed a comprehensive physical interpretation. In this work, the thermal evolution of carriers' decay process is examined by spectroscopic approaches in high-efficiency InGaN/GaN multiple quantum well (MQW) samples. Based on the localized-state ensemble model, the peak shift in temperature-dependent PL is excellently fitted by the "red" and "blue" localization centers, which perfectly match with the fast and slow processes resolved from TRPL using biexponential model, All variations in emission peak, line shape, filling position, and lifetime with temperature are elucidated by carriers redistributing between two kinds of localization centers according to the density of states. Meanwhile, the impact of substrate and underlying layers in MQW samples has also been compared. Through such systematic analysis, the dynamics of carriers in MQWs have been quantitatively discussed, and a comprehensive understanding on the localization-induced luminescence mechanism is achieved.

Space-charge-limited carrier localization in InGaN/GaN quantum wells

Carrier localization mechanisms in InGaN/GaN quantum wells

Gaussian impurity bands in GaN and weakening of carrier confinement in InGaN/GaN quantum wells

Probing local emission properties in InGaN/GaN quantum wells by scanning tunneling luminescence microscopy

Band Gap Renormalization and Carrier Localization Effects in InGaN∕GaN Quantum-Wells Light Emitting Diodes with Si Doped Barriers

Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and "negative" Thermal Activation Energy.

Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: insights from theory and numerical simulations

Anti-localization suppresses non-radiative recombination in GaInN/GaN quantum wells

Non-exponential Photoluminescence Decay Dynamics of Localized Carriers in Disordered InGaN/GaN Quantum Wells: the Role of Localization Length

Consistency on Two Kinds of Localized Centers Examined from Temperature-Dependent and Time-Resolved Photoluminescence in InGaN/GaN Multiple Quantum Wells

Study on Carrier Lifetimes in InGaN Multi‐quantum Well with Different Barriers by Time‐resolved Photoluminescence

Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy

The Investigation on Carrier Distribution in InGaN/GaN Multiple Quantum Well Layers

Surface-Induced Carrier Localization and Recombination Characteristics in InGaN/GaN Quantum Dots in Nanopillars

Carrier recombination dynamics in InGaN/GaN multiple quantum wells

Lateral Carrier Confinement in InGaN Quantum-Well Nanorods

Effect of Localization States on the Electroluminescence Spectral Width of Blue–green Light Emitting InGaN/GaN Multiple Quantum Wells

Nanoscale Cathodoluminescence Spectroscopy Probing the Nitride Quantum Wells in an Electron Microcope

Thermally Activated Carrier Transfer Processes in InGaN∕GaN Multi-Quantum-well Light-Emitting Devices

On Resonant Optical Excitation and Carrier Escape in GaInN/GaN Quantum Wells

Direct Observation and Theoretical Interpretation of Strongly Enhanced Lateral Diffusion of Photogenerated Carriers in InGaN∕GaN Quantum Well Structures