Abstract:Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) devices exhibit substantial prospects for application under extreme operational conditions, including elevated temperatures, high voltages, and high frequencies. Nevertheless, owing to their distinctive material and structural attributes, SiC MOSFET devices are not devoid of challenges, with the short-circuit phenomenon constituting a pivotal avenue of inquiry. The short-circuit effect pertains to the abrupt escalation of leakage current that these devices might undergo under elevated voltage conditions, thereby exerting a perturbing influence on their stability and reliability. Investigations into the short-circuit effect predominantly revolve around two dimensions: one involves comprehending its underlying physical mechanisms, while the other centers on identifying commensurate remedial approaches.With respect to the underlying physical mechanisms, researchers have discerned that the elevated breakdown field strength and augmented carrier mobility intrinsic to SiC materials engender an augmentation in leakage current, consequently giving rise to the short-circuit effect. Furthermore, factors such as oxide layer anomalies and surface states are also conceivable catalysts for the surge in leakage current. To rectify this predicament, scholars have proffered a panoply of stratagems, encompassing the optimization of material synthesis processes, enhancement of oxide layer quality, refinement of device structural designs, and incorporation of protective circuitry, among others. In summation, the investigation of the short-circuit effect in silicon carbide MOSFET devices is fundamentally aimed at attaining an in-depth comprehension of its causative mechanisms. Moreover, it endeavors to proffer efficacious resolutions conducive to augmenting the reliability and steadfastness of these devices within high-temperature and high-voltage environments, thereby facilitating their widespread integration within the ambit of high-performance power electronics.

Working principle and characteristic analysis of SiC MOSFET

Comparative Study on Reliability and Application Features of SiC MOSFET

Analysis of basic performance parameters and temperature effect of SiC-MOSFET

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

An investigation into the short-circuit characteristics of Sic MOSFET power devices

Dispersion analysis of dynamic and static characteristic parameters of 1200V SiC MOSFET

Advances in SiC power MOSFET technology

Review on the Reliability Mechanisms of SiC Power MOSFETs: A Comparison between Planar-Gate and Trench-Gate Structures

Review and analysis of SiC MOSFETs’ ruggedness and reliability

Development of SiC Superjunction MOSFET: A Review

Challenges in SiC power MOSFET design

Design and Evaluation of a High Performance Silicon Carbide MOSFET Driver

Characterization, Analysis, and Failure Investigation of SiC Materials and Power Devices

Comparison of High Voltage SiC MOSFET and Si IGBT Power Module Thermal Performance

Characteristics of Thermally Nitrided Gate Oxide Grown on N- and P-type 4H-SiC Surface from Commercial SiC MOSFET Perspective

Comprehensive Analysis of Electrical Parameters Degradations for SiC Power MOSFETs Under Repetitive Short-Circuit Stress

A Compact Circuit-Level Model for Single-Event Burnout in SiC Power MOSFET Devices

Review on SiC-MOSFET devices and associated gate drivers

Comparative Study of Temperature-Dependent Characteristics for SiC MOSFETs

Modelling and Failure Analysis of SiC MOSFET under the Effects of Parasitic Parameters

Circuit model of SiC MOSFET and application