Abstract:Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) devices exhibit substantial prospects for application under extreme operational conditions, including elevated temperatures, high voltages, and high frequencies. Nevertheless, owing to their distinctive material and structural attributes, SiC MOSFET devices are not devoid of challenges, with the short-circuit phenomenon constituting a pivotal avenue of inquiry. The short-circuit effect pertains to the abrupt escalation of leakage current that these devices might undergo under elevated voltage conditions, thereby exerting a perturbing influence on their stability and reliability. Investigations into the short-circuit effect predominantly revolve around two dimensions: one involves comprehending its underlying physical mechanisms, while the other centers on identifying commensurate remedial approaches.With respect to the underlying physical mechanisms, researchers have discerned that the elevated breakdown field strength and augmented carrier mobility intrinsic to SiC materials engender an augmentation in leakage current, consequently giving rise to the short-circuit effect. Furthermore, factors such as oxide layer anomalies and surface states are also conceivable catalysts for the surge in leakage current. To rectify this predicament, scholars have proffered a panoply of stratagems, encompassing the optimization of material synthesis processes, enhancement of oxide layer quality, refinement of device structural designs, and incorporation of protective circuitry, among others. In summation, the investigation of the short-circuit effect in silicon carbide MOSFET devices is fundamentally aimed at attaining an in-depth comprehension of its causative mechanisms. Moreover, it endeavors to proffer efficacious resolutions conducive to augmenting the reliability and steadfastness of these devices within high-temperature and high-voltage environments, thereby facilitating their widespread integration within the ambit of high-performance power electronics.

Challenges in SiC power MOSFET design

Advances in SiC power MOSFET technology

Design and evaluation of press-pack SiC MOSFET

Static and Dynamic Behaviour of SiC JFET/Si MOSFET Cascade Configuration for High-Performance Power Switches

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

Review on SiC-MOSFET devices and associated gate drivers

Development of SiC Superjunction MOSFET: A Review

Recent advances in silicon carbide MOSFET power devices

Applications and challenges of Silicon Carbide (SiC) MOSFET technology in electric vehicle propulsion systems: A review

Opportunities, Challenges, and Potential Solutions in the Application of Fast-Switching SiC Power Devices and Converters

Influence of driving and parasitic parameters on the switching behaviors of the SiC MOSFET

Comprehensive Short Circuit Behavior and Failure Analysis of 1.2kv SiC MOSFETs Across Multiple Vendors and Generations

Dispersion analysis of dynamic and static characteristic parameters of 1200V SiC MOSFET

An investigation into the short-circuit characteristics of Sic MOSFET power devices

Roadmap for SiC power devices

Review of Silicon Carbide Processing for Power MOSFET

Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments

Review and analysis of SiC MOSFETs’ ruggedness and reliability

Over dV/dt Robustness of Switching Behavior of SiC MOSFET and a Novel Main Junction Region Design