Abstract:Silicon Carbide (SiC) is a booming semiconductor material with a wider bandgap than silicon, which brings superior electrical performance for applications such as high critical electric field, good high-temperature characteristics, etc. Among SiC devices, MOSFET received increasing attention, due to its excellent advantages such as low switching loss, high operating frequency, etc. In recent years, SiC MOSFETs were under fast development, while facing numerous challenges. For high voltage SiC MOSFET, the size of the device and drift region resistance are the main bottlenecks. The superjunction (SJ) structure is well-known as a "milestone" in the history of power devices, especially for MOSFET. Superjunction achieved a better trade-off between the breakdown voltage and the specific on-resistance by introducing a transverse electric field to the drift layer. A 3.3kV-class SiC SJ MOSFET was so far reported as a ultra-low specific on-resistance for 3.3 m Omega cm(2) at room temperature and 6.2 m Omega cm(2) at 175 degrees C.[21] However, the development of SiC SJ MOSFETs is facing challenges, in terms of the fabrication of the p-pillar, the charge balance condition, etc. In this paper, recent progress on SiC SJ MOSFET was reviewed and listed through countries and regions. Achievements in both theoretical simulation and device fabrication were analyzed and compared. Moreover, constraints and prospects for the development of SiC SJ MOSFET were also discussed. Through this review, it is expected to help researchers to summarize recent advances on the SiC SJ MOSFET and to analyze the future trends, and to provide strategic planning for practitioners.

Analyzing the Changes in the Third Quadrant Characteristics of SiC MOSFET Induced by Threshold Drift

Study of the Influence of Different Gate Oxide Traps on Threshold Voltage Drift of SiC MOSFET Based on Transient Current

Investigation on Surge Current Capability of 4H-Sic Trench-Gate MOSFETs in Third Quadrant under Various VGS Biases

A Physical-Based 3Rd-Quadrant Behavioral Model for Power SiC MOSFET

Modeling of the Influence on Effective $\textit{v}_{\text{th}}$ from Interface States, Short Channel Effects, and Contact Resistance in SiC MOSFETs

Working principle and characteristic analysis of SiC MOSFET

Novel SiC Trench MOSFET with Improved Third-Quadrant Performance and Switching Speed

Quantum Mechanical Effects on the Threshold Voltage of Surrounding-Gate Mosfets

Characterization of Threshold Voltage Shift in SiC MOSFETs Under Nanosecond-Range Switching and Its Impact on High- Frequency Applications

Dispersion analysis of dynamic and static characteristic parameters of 1200V SiC MOSFET

A Discrete Channel Model to Estimate Threshold Voltage Deviation Induced by the Voltage Stress in SiC Short Channel MOSFETs

Degradation Dependency Analysis and Modeling of 1700 V Planar-Gate SiC MOSFETs under Gate Switching Instability

Comparative Study of Temperature-Dependent Characteristics for SiC MOSFETs

Investigation of Inrush Current Induced Trench Gate Degradation inside SiC MOSFET by New Fowler- Nordheim Localization Methodology

Investigations on the Degradations of Double-Trench SiC Power MOSFETs under Repetitive Avalanche Stress

Over dV/dt Robustness of Switching Behavior of SiC MOSFET and a Novel Main Junction Region Design

Simulation of Threshold Voltage Instability of 4H-Sic MOSFET

Characteristics and Mechanisms of Subthreshold Voltage Hysteresis in 4H-Sic MOSFETs*

Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example

Analysis of Off-State and On-State Performance in A Silicon-On-Insulator Power Mosfet with A Low-K Dielectric Trench

Development of SiC Superjunction MOSFET: A Review