Abstract:When the traditional planar metal-oxide-semiconductor-field-effect transistors (MOSFETs) encounter insurmountable bottleneck of static power dissipation, junctionless transistor (JLT) becomes a promising candidate for sub-22 nm nanoscale devices due to its simpler fabrication process and better short-channel performances. Subthreshold behaviors dominate the standby power of nanoscale JLTs. In this chapter, a physics-based analytical model of electrostatic potential for both silicon and germanium short-channel junctionless cylindrical surrounding-gate (JLCSG) MOSFETs operated in the subthreshold regime is proposed, in which the full two-dimensional (2D) Poisson's equation is solved in the channel region by a method of series expansion. The expression of the proposed electrostatic potential is completely rigorous and explicit. Based on this result, the expressions of threshold voltage, subthreshold drain current, and subthreshold swing for JLCSG MOSFETs are derived. Subthreshold behaviors are studied in detail by changing different device parameters and bias conditions, including doping concentration, channel radius, gate length, gate equivalent oxide layer thickness, drain voltage, and gate voltage. Results predicted by all the analytical models agree well with numerical solutions from the three-dimensional simulator. These analytical models can be used to investigate the operating mechanisms of nanoscale JLCSG MOSFETs and to optimize their device performances.

Complicated Subthreshold Behavior of Undoped Cylindrical Surrounding-Gate MOSFETs

Sub-Threshold Behavior of Long Channel Undoped Cylindrical Surrounding-Gate Mosfets

Performance Analysis of Ultra-thin-Body, Double-Gate pMOSFETs at 5 nm Technology Node

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

A Study of Subthreshold Behavior of Short-Channel Junctionless Cylindrical Surrounding-Gate MOSFETs from an Electrostatic Potential Viewpoint

Analytical Model of the Subthreshold Behavior in Short-Channel Junctionless Cylindrical Surrounding-Gate Mosfets

Analytical Model for Subthreshold Swing and Threshold Voltage of Surrounding Gate Metal–Oxide–Semiconductor Field-Effect Transistors

A Charge-Based Model for Long-Channel Cylindrical Surrounding-Gate MOSFETs from Intrinsic Channel to Heavily Doped Body

Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs

Quantum-Mechanical Study on Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

A charge-based compact model for arbitrary doped cylindrical surrounding-gate MOSFETs

Quantum Mechanical Effects on the Threshold Voltage of Surrounding-Gate Mosfets

Analytic model for subthreshold channel potential and threshold voltage of the Schottky-barrier surrounding-gate MOSFETS

A Fully Analytical Current Model for Gate–Source Overlap Tunneling FETs as the Ternary Devices

A Compact Model of Subthreshold Current with Source/Drain Depletion Effect for the Short-Channel Junctionless Cylindrical Surrounding-Gate MOSFETs

Modeling of the Influence on Effective $\textit{v}_{\text{th}}$ from Interface States, Short Channel Effects, and Contact Resistance in SiC MOSFETs

Compact I-V Model for Sub-100nm Bulk Silicon MOSFETs

Theory of Short-Channel Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect-Transistors

Electric Potential and Threshold Voltage Models for Double-Gate Schottky-barrier Source/drain MOSFETs

An analytical subthreshold I-V model of SiC MOSFETs

An approximate carrier-based compact model for fully depleted surrounding-gate MOSFETs with a finite doping body