Abstract:Our research focuses on the vacuum electronics of carbon nano materials. Based on the unique vacuum electronics properties of low-dimensional nano materials, the progress following aspects will be introduced briefly. 1. The vacuum electronic performance of carbon nano materials. We have studied the electron emission from individual carbon nanotubes with specified chiral index, and found the size and conductance effect of electron emission. Stable carbon nanotube field emitter has developed, and for the first time in the world used the emitter to fulfil the neutralization task of a radio-frequency ion propeller in orbit for “Taiji-1” satellite. We have also investigated the performance of carbon nanotube film as a new kind of gate materials in vacuum electronic device, and reported the electron absorbance performance of carbon nanotube array. 2. Interaction of incident electrons with low dimensional nano materials. We have developed a fast crystallography characterization method and theory for large area graphene and the phenomena on its surface, and invented the related instrument, which has served for characterization of many kinds of materials. This method and instrument could be used to study the adsorption phenomena on the graphene surface. 3. The vacuum electronic effect during the synthesis of low-dimensional nano materials. By introducing the concept and analysis method of vacuum electronics, controlled synthesis of high purity semiconducting carbon nanotube array has been realized. The electric field enhancement effect and obvious difference of density of state between metallic and semiconducting carbon nanotube both play important roles. The applied external electric field has amplified the electrostatic energy difference between metallic and semiconducting carbon nanotubes, and semiconducting one is superior whatever from energy and growth dynamics. And a low voltage electric field and real time control has been further realized to synthesize high purity semiconductor carbon nanotube.

Structure Optimization of Planar Nanoscale Vacuum Channel Transistor

High-frequency performance in nanoscale vacuum channel transistors with gate-cathode height difference

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Optimization of a Field Emission Electron Source Based on Nano-Vacuum Channel Structures

Fabrication and Characterization of Gated Carbon Nanotube Emitters in A Trench Structure

Analysis of the electron emission characteristics and working mechanism of a planar bottom gate vacuum field emission triode with a nanoscale channel

Nanoscale Vacuum Field Emission Triode With a Double Gate Structure

Nanoscale vacuum channel transistors fabricated on silicon carbide wafers

Carbon Nanotube Technology For Solid State And Vacuum Electronics

Nanoscale Vacuum Channel Transistor

The Optimization and Fabrication of High Electron Mobility Transistors Integrated with Microstructure

Nanotube and Nanowire Transistors

A Vacuum Transistor Based on Field-Assisted Thermionic Emission from a Multiwalled Carbon Nanotube

An On-chip Vacuum Transistor Based on a Multiwalled Carbon Nanotube*

Nanoelectromechanical Switch with Low Voltage Drive

Reply to the ‘Comment on “Design and circuit simulation of nanoscale vacuum channel transistors”’ by R. Forbes, Nanoscale Adv. , 2020, 2 , DOI: 10.1039/D0NA00687D

Planar nanoscale vacuum channel transistors based on resistive switching

Carbon Nano Materials Vacuum Electronics

Vertical C-Shaped-Channel Nanosheet FETs Featured With Precise Control of Both Channel-Thickness and Gate-Length

An On-Chip Vacuum Triode Based on Thermionic Electron Emission from Super-Aligned Carbon Nanotube Films

A Nanoscale Vacuum Transistor Based on Vertical Silicon Dioxide Tunneling Junctions