High-performance chemical-bath deposited CdS thin-film transistors with ZrO2 gate dielectric

Hareesh Dondapati,Duc Ha,Erin Jenrette,Bo Xiao,A. K. Pradhan

DOI: https://doi.org/10.48550/arXiv.1505.06678

2015-05-25

Materials Science

Abstract:We demonstrate high performance chemical bath deposited CdS thin-film transistors TFTs using atomic layer deposited ZrO2 based high-k gate dielectric material.

What problem does this paper attempt to address?

Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

L. Zhu,Gang He,Jianguo Lv,Elvira Fortunato,Rodrigo Martins

DOI: https://doi.org/10.1039/c8ra02108b

IF: 4.036

2018-01-01

RSC Advances

Abstract:Solution based deposition has been recently considered as a viable option for low-cost flexible electronics. In this context, research efforts have been increasingly focused on the development of suitable solution-processed materials for oxide based transistors. In this work, we report a fully solution synthesis route, using 2-methoxyethanol as solvent, for the preparation of In2O3 thin films and ZrOx gate dielectrics, as well as the fabrication of In2O3-based TFTs. To verify the possible applications of ZrOx thin films as the gate dielectric in complementary metal oxide semiconductor (CMOS) electronics, fully solution-induced In2O3 TFTs based on ZrO2 dielectrics have been integrated and investigated. The devices, with an optimized annealing temperature of 300 degrees C, have demonstrated high electrical performance and operational stability at a low voltage of 2 V, including a high mu sat of 4.42 cm(2) V-1 s(-1), low threshold voltage of 0.31 V, threshold voltage shift of 0.15 V under positive bias stress for 7200 s, and large I-on/I-off of 7.5 x 10(7), respectively. The as-fabricated In2O3/ZrOx TFTs enable fully solution-derived oxide TFTs for potential application in portable and low-power consumption electronics.
Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application

Dongqi Xiao,Gang He,Zhaoqi Sun,Jianguo Lv,Peng Jin,Changyong Zheng,Mao Liu

DOI: https://doi.org/10.1016/j.ceramint.2015.08.177

IF: 5.532

2016-01-01

Ceramics International

Abstract:Solution-processed high-k gate dielectrics for metal-oxide-semiconductor (MOS) capacitor have been widely investigated with the objective of achieving high performance field effect transistors (FETs) for next-generation microelectronic device. In current work, the effect of postdeposition annealing temperature on the microstructure, optical and electrical properties of peroxo-zirconium oxide (ZrO2) gate dielectrics fabricated by a simple spin-coating method has been studied systemically. By means of characterization of spectroscopy ellipsometry and ultraviolet–visible spectroscopy, the thicknesses and optical constants of ZrO2 gate dielectrics have been determined precisely. The annealing temperature dependent electrical properties of ZrO2 films were determined by capacitance–voltage (C–V) and leakage current density–voltage (J–V) measurements. Based on the implementation as gate insulator, the solution-processed ZrO2-based MOS capacitor showed good and stable performances during annealing at 700°C. As a result, the dominant leakage conduction mechanism for optimized 700°C-annealed sample has been discussed in detail. Our results show the possibility of the solution-processed ZrO2 dielectric layer as a gate insulator for application in MOSFETs.
Fully Printed Top-Gate Metal–Oxide Thin-Film Transistors Based on Scandium-Zirconium-Oxide Dielectric

Yuzhi Li,Linfeng Lan,Shiben Hu,Peixiong Gao,Xingqiang Dai,Penghui He,Xifeng Li,Junbiao Peng

DOI: https://doi.org/10.1109/TED.2018.2877979

IF: 3.1

2019-01-01

IEEE Transactions on Electron Devices

Abstract:The fully inkjet-printed top-gate metal-oxide thin-film transistors (TFTs) with excellent electrical performance are realized with the gate dielectric layer of scandium zirconium oxide (Sc1Zr1Ox). It is found that adding of nitrate-based scandium oxide (ScOx) precursor into the chloride ligand-based zirconium oxide (ZrOx) precursor will reduce the corrosivity of the mixed solution, and the incorpo...
High Performance Rf Sputtering Deposited Zno Thin-Film Transistors

Shao-Juan Li,Dedong Han,Lei Sun,Yi Wang,Ru-Qi Han,Shengdong Zhan

2011-01-01

Abstract:In this paper, the construction and characteristics of bottom-gate thin-film transistors (TFTs) that use ZnO as the active channel layer were investigated. The as deposited ZnO film was sputtered under oxygen rich ambience with a metallic Zinc target at room temperature. TFT characteristics measurement shows that the TFTs work in the enhancement mode. The major performance parameters of the TFTs with SiN gate insulator include a field effect mobility of 3.5 cm(2)/(V.s), an on-off current ratio more than 1x10(7) and a threshold voltage of 6.2V.
Enhancement of electrical properties of solution-processed oxide thin film transistors using ZrO2 gate dielectrics deposited by an oxygen-doped solution

Chunlai Luo,Ting Huang,Changhao Li,Yan Zhang,Zhengmiao Zou,Yushan Li,Ruiqiang Tao,Jinwei Gao,Guofu Zhou,Xubing Lu,Jun-Ming Liu

DOI: https://doi.org/10.1088/1361-6463/abd062

2021-01-01

Abstract:Solution deposition of high-quality dielectric films is one of the big challenges in achieving excellent electrical performance of bi-layer solution-processed metal oxide (MO) thin film transistors (TFTs). Using an oxygen-doped precursor solution (ODS), we successfully deposited high-quality zirconium oxide (ZrO2) dielectric films by a solution process. The ODS-ZrO2 films show low leakage current density (10(-7) A cm(-2) at 2 MV cm(-1)), high breakdown electric field (7.0 MV cm(-1)) and high permittivity (19.5). Consequently, solution-processed indium oxide (In2O3) TFTs with ODS-ZrO2 film as the gate dielectric show excellent electrical performance, for example high carrier mobility up to 62.02 cm(2) V s(-1), a large on/off drain current ratio of 3.0 x 10(6), a small subthreshold swing of 0.14 V and excellent bias stress stability. Our work demonstrates the critical role of the dielectric film in the electrical performance of MO-TFTs. More importantly, we reveal that high dielectric constant (kappa) dielectric film deposited with ODS should be an effective way to significantly increase the electrical properties of MO-TFTs for future low-cost, high-performance applications.
Electrical Properties of Wide Bandgap ZnMgO and Fabrication of Transparent Thin Film Transistors

Huizhen Wu,Jun Liang,Yanfeng Lao,Ping Yu,Tianning Xu,Dongjiang Qiu

DOI: https://doi.org/10.3321/j.issn:0253-4177.2006.z1.056

2006-01-01

Abstract:We propose to use Hexagonal phase Zr1-xMgxO as active channel layer and cubic phase Zn1-xMgxO as gate dielectric of transparent thin film transistors (TFTs). The consistent Zn1-xMgxO thin films are sequentially deposited on ITO substrates and monolithigraph and electrical contact are made. The TFTs have demonstrated an on/off ratio of 104 and a channel mobility on the order of 0.6 cm2/(V·s). Leakage current is as low as 4.0 × 10-8 A at 2.5 MV/cm electrical field.
Study of zinc tin oxide thin-film transistor

Xiong Wang,Cai Xi-Kun,Yuan Zi-Jian,Zhu Xia-Ming,Qiu Dong-Jiang,Wu Hui-Zhen

DOI: https://doi.org/10.7498/aps.60.037305

2011-01-01

Abstract:Thin film transistors with zinc tin oxide as the active channel layer were fabricated on ITO glass by rf magnetron sputtering. SiO 2 gate dielectric was grown using plasma-enhanced chemical vapor deposition (PECVD). These devices operate with a maximum field effect mobility of 9.1 cm 2/V · s, threshold voltage of -2 V, and current on/off ratio of 10 4. © 2011 Chinese Physical Society.
Advancements in Metal Oxide Thin Film Quality in Solution-Processed High-κ Dielectrics for High-Performance Transistors

Ravindra Naik Bukke,Aman Shukla,C. A. Anil,Pavan Pujar

DOI: https://doi.org/10.1021/acsaelm.3c01845

IF: 4.494

2024-03-05

ACS Applied Electronic Materials

Abstract:The present spotlight article addresses the challenges associated with metal oxide dielectric thin films deposited from liquid-phase precursors, which are often deemed inferior in thin film quality; suboptimal film quality adversely impacts the performance of electronic devices, particularly thin film transistors (TFTs). The traditional spin-casting method contributes to porous film masses due to the evaporation of solvent, and thermal annealing results in rough interfaces. Also, the presence of a high concentration of oxygen vacancies introduces traps, leading to hysteresis. To overcome these, the present article explores various film treatment methodologies, including Ar/O2 plasma treatment, the use of high-oxygen affinity dopants, and spray deposition of prepurified solution precursors. These treatments significantly improved film characteristics and TFT performance. Aluminum-doped zirconium oxide (ZAO) dielectrics treated with Ar/O2 plasma showed enhanced density (4.16 g/cm3). ZAO/amorphous indium gallium zinc oxide TFTs exhibited hysteresis-free characteristics with a field effect mobility (μ) of >15 cm2/V-s and an on:off (I ON:I OFF) switching ratio of 108. Using purified precursors for depositing dielectric ZrO x , along with amorphous indium gallium zinc oxide, resulted in μ and I ON:I OFF values exceeding 15 cm2/V-s and 109, respectively. Additionally, incorporating substitutional dopants such as hafnium in ZrO x improved TFT performance. TFTs composed of ZrO x and lanthanum zinc oxide demonstrated a μ of 22.2 cm2/V-s and I ON:I OFF of 108. These performance parameters were observed across a variety of devices and demonstrated stability. These enhanced performance parameters are attributed to improved film quality, including reduced roughness and defect-traps, facilitating seamless electrical conduction at the interface.

materials science, multidisciplinary,engineering, electrical & electronic
High-Performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

Junchen Dong,Xing Zhang,Zhuang Yi,Huijin Li,Shengdong Zhang,Dedong Han,Yi Wang

DOI: https://doi.org/10.1109/TED.2019.2915625

IF: 3.1

2019-05-24

IEEE Transactions on Electron Devices

Abstract:High-performance ZnO thin-film transistors (TFTs) have been successfully fabricated by atomic layer deposition (ALD) with a maximum temperature of 200 °C. The impacts of deposition and annealing temperature on the characteristics of devices were discussed. ZnO thin films show a (002) preferred orientation at the high growth temperature. The carrier concentrations of ZnO TFTs can be optimized by appropriate growth temperature and annealing treatments. Subthreshold swing (SS) and hysteresis windows of TFTs are improved after annealing in dry O2 due to the reduction in traps at ZnO/SiO2 interface or/and within the ZnO channel. The ZnO TFT deposited at 150 °C with 200 °C annealing in oxygen demonstrates excellent electrical characteristics with high saturation mobility <inline-formula> <tex-math notation="LaTeX">$\mu _{\text {sat}}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$7.8 {\mathrm {cm}}^{\text {2}}\text{V}^{-\text {1}}\text{s}^{-\text {1}}$ </tex-math></inline-formula>, small SS of 127 mV/decade, high <inline-formula> <tex-math notation="LaTeX">${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$2.8 \times 10^{\text {9}}$ </tex-math></inline-formula>, and good contact between source/drain electrodes. The high-performance ZnO TFTs with low processing temperatures have great potential in application for flexible electronics.

Materials Science,Engineering,Physics
Reliability Study of Zinc Oxide Thin-Film Transistor with High-K Gate Dielectric

Dedong Han,Youfeng Geng,Jian Cai,Wei Wang,Liangliang Wang,Yu Tian,Yi Wang,Lifeng Liu,Shengdong Zhang

DOI: https://doi.org/10.1109/edssc.2012.6482837

2012-01-01

Abstract:ZnO-based thin-film transistors with High-K gate dielectric HfO2 are fabricated on glass substrates by radio frequency (rf) magnetron sputtering. The electrical properties of ZnO-based TFTs were investigated by ID-VD and ID-V G measurements, and reliability of the ZnO TFTs was studied under constant voltage stress. The results indicate that ZnO thin-film transistors with High-K gate dielectric own good electrical properties and high reliability.
High-Performance Thin-Film Transistors with ZnO/Al2O3 Superlattice Channel Fabricated by Atomic Layer Deposition

G. Cui,Dedong Han,Junchen Dong,Y. Cong,Xiaomi Zhang,Huijin Li,Wen Yu,S. Zhang,Xing Zhang,Yi Wang

2016-01-01

Abstract:High-performance thin-film transistors (TFTs) with ZnO/Al2O3 superlattice channel were successfully fabricated by atomic layer deposition (ALD). The morphological and electrical properties of the TFTs with ZnO/Al2O3 superlattice channel were studied. The TFTs with ZnO/ Al2O3/ZnO structure exhibited optimum performance with low threshold voltage (VTH) of 0.9V, high mobility (μsat) of 109cmVs, steep subthreshold swing (SS) of 162mV/decade and high Ion/Ioff ratio of 3.15×10. The enhanced electrical properties were explained on the improved crystalline nature of the channel layer and passivation effect of Al2O3 layer.
Solution-Processed Zirconium Oxide Gate Insulators for Top Gate and Low Operating Voltage Thin-Film Transistor

Yana Gao,Jianhua Zhang,Xifeng Li

DOI: https://doi.org/10.1109/jdt.2015.2438955

2015-01-01

Journal of Display Technology

Abstract:We report a solution-processed a top gate indium-gallium-zinc oxide thin film transistors (IGZO TFTs) with high-zirconium oxide (ZrOx) dielectric. Both the dielectrics and electrodes were fabricated by spin coating or screen printing. The ZrOx exhibits an amorphous structure and smooth enough to be used as a gate insulator for TFT. The TFT with maximum process temperature of 300 degrees C had a saturation mobility of 0.2 cm(2)/V . s, an on/off ratio of 10, a threshold voltage of 0.3 V, and the subthreshold swing is 0.34 V/decade.
Impact of ZrO 2 Dielectrics Thickness on Electrical Performance of TiO 2 Thin Film Transistors with Sub-2 V Operation

Jie Zhang,Meng Jia,Maria Gabriela Sales,Yong Zhao,Guangyang Lin,Peng Cui,Chaiwarut Santiwipharat,Chaoying Ni,Stephen McDonnell,Yuping Zeng

DOI: https://doi.org/10.1021/acsaelm.1c00909

IF: 4.494

2021-11-16

ACS Applied Electronic Materials

Abstract:In the present work, the impact of ZrO2 gate dielectric thickness on the electrical performance of TiO2 thin film transistors (TFTs) is systematically investigated. Exhaustive electrical measurements on TFTs, metal–insulator–metal, and metal–oxide–semiconductor capacitors are carried out with varying ZrO2 dielectrics of different thicknesses. It is found that the ZrO2 possesses an outstanding thickness scalability, providing reliable dielectric properties under an ultrathin physical thickness of 5 nm, while further reduction in ZrO2 thickness would lead to a breakdown of the TFTs, indicating the physical limitations for the ultrathin ZrO2 dielectrics. The TiO2 TFTs with the 5 nm-thick ZrO2 dielectric exhibit an enhanced electrical performance, including a high on/off current ratio (I on/I off) of 7.7 × 108, a nearly ideal subthreshold (SS) of 72 mV/dec, and a high electron mobility (μeff) of 5.74 cm2·V–1·s–1 under an ultralow voltage of 2 V. Such prominent electrical characteristics with a battery-drivable low-voltage operation prove the suitability of the TiO2 TFTs for Internet of Things applications. This comprehensive study, revealing the behaviors of leakage current, oxide capacitance, oxide charges, and interface traps with respect to the ZrO2 thickness, sheds light on the quality and scalability of the ZrO2 dielectrics that can be extended to other channel materials, and also offers a framework for evaluating the material quality of other dielectrics. Furthermore, from a material point of view, the underlying physical reasons for the excellent ZrO2 thickness scalability are believed to be (1) the smooth surfaces of TiO2 and ZrO2, (2) the well-structured ZrO2 without detectable oxygen-related defects, and (3) the large conduction band offset between ZrO2 and TiO2. Overall, this study not only shows that the TiO2 TFTs hold great potential to empower future IoT applications, but also provides important guidance regarding dielectric scaling and quality evaluation in the nanometer scale.

materials science, multidisciplinary,engineering, electrical & electronic
High-Performance Amorphous InGaZnO Thin Film Transistor With High-k Van Der Waals Molecular Dielectric

Yuan Kai,Ying Zhao,Jiawei Wang,Congyan Lu,Yu Shan,Zean Guo,Chao Jiang,Ling Li

DOI: https://doi.org/10.1109/led.2022.3199024

IF: 4.8157

2022-09-30

IEEE Electron Device Letters

Abstract:We report the amorphous Indium-Gallium-Zinc-Oxide (In:Ga:Zn = 2.8:9.6:1) thin film transistors (TFTs) using an inorganic molecular insulating dielectric of antimony trioxide (Sb2O3). Due to dangling-bond-free interface nature of the van der Waals (vdW) bonded interaction, the TFTs show robustly enhanced field-effect mobility ( ) up to 45 cm2V−1s−1, in addition with occurance of bandlike transport. Importantly, ideal onset speed with subthreshold swing (SS) down to 70 mV/dec was achieved, demonstrating the suppression of interface defects which can be further illustrated by the superior bias stress stability under positive gate-bias stress (PBS), with only 12 mV threshold voltage shift at applying gate bias with 3 V for 4000 s. The homogeneous performance of a series of devices processed exhibit excellent stability and reliability.

engineering, electrical & electronic
Titanium doped Zinc-oxide based Thin Film Transistors: Optimization of the source/drain materials

nannan zhao,dedong han,zhuofa chen,jing wu,yingying cong,junchen dong,feilong zhao,shengdong zhang,xing zhang,yi wang

DOI: https://doi.org/10.1109/ICSICT.2014.7021274

2014-01-01

Abstract:This paper aims at improving the performances of Titanium-doped Zinc-oxide (TZO) Thin-Film-Transistors (TFTs) by optimizing the source/drain materials. We successfully fabricate TZO TFTs with different source/drain materials, such as Al, Mo, Cr, Mo/Al/Mo and Cr/Al/Cr. No intentional substrate-heating is performed during each deposition step and the highest process temperature is 80°C. The results show that TFTs adopting Cr/Al/Cr as source/drain exhibit improved electrical properties with a high saturation mobility (μsat) of 171.4 cm2V-1S-1, a low subthreshold swing (SS) of 0.25 V/decade, a high Ion/Ioff ratio of 2×108 and a threshold voltage (Vth) of 3.0V.
Research Progress of High Dielectric Constant Zirconia-Based Materials for Gate Dielectric Application

Junan Xie,Zhennan Zhu,Hong Tao,Shangxiong Zhou,Zhihao Liang,Zhihang Li,Rihui Yao,Yiping Wang,Honglong Ning,Junbiao Peng

DOI: https://doi.org/10.3390/coatings10070698

IF: 3.236

2020-07-20

Coatings

Abstract:The high dielectric constant ZrO2, as one of the most promising gate dielectric materials for next generation semiconductor device, is expected to be introduced as a new high k dielectric layer to replace the traditional SiO2 gate dielectric. The electrical properties of ZrO2 films prepared by various deposition methods and the main methods to improve their electrical properties are introduced, including doping of nonmetal elements, metal doping design of pseudo-binary alloy system, new stacking structure, coupling with organic materials and utilization of crystalline ZrO2 as well as optimization of low-temperature solution process. The applications of ZrO2 and its composite thin film materials in metal oxide semiconductor field effect transistor (MOSFET) and thin film transistors (TFTs) with low power consumption and high performance are prospected.

materials science, multidisciplinary,physics, applied, coatings & films
Feasibility of Atomic Layer Deposited AlZrOx Film to Achieve High Performance and Good Stability of ZnSnO-TFT

Jun Li,Chuan-Xin Huang,Cheng-Yu Zhao,De-Yao Zhong,Jian-Hua Zhang,Xi-Feng Li

DOI: https://doi.org/10.1109/ted.2017.2762744

IF: 3.1

2017-01-01

IEEE Transactions on Electron Devices

Abstract:In this paper, ZnSnO thin-film transistors (TFTs) with atomic layer deposited AlZrOx insulator of varying thicknesses are first fabricated. The electrical performance and thermal stability of ZnSnO-TFTs with different AlZrOx thicknesses are characterized. The 130-nm-thick AlZrOx-based TFT shows the optimized electrical properties. (Its mobility, threshold voltage, subthreshold voltage swing, and on-off ratio are 12.5 cm(2)/V.s, 0.3 V, 0.15 V/dec, and 8 x 107, respectively.) In addition, ZnSnO-TFT with 130-nm AlZrOx film under temperature stress shows a small negative threshold voltage shift of 1.2 V. Density of states is calculated by the temperature-dependent field-effect measurement. The improvement of temperature stability is attributed to the reduction of interface trap states and smooth AlZrOx surface. The results are further verified by the bias stability. It indicates that using atomic layer deposited AlZrOx as a gate insulator is an effective method to achieve high performance and good stability of ZnSnO-TFT.
High-Performance Transistors Based on Zinc Tin Oxides by Single Spin-Coating Process

Yunlong Zhao,Lian Duan,Guifang Dong,Deqiang Zhang,Juan Qiao,Liduo Wan,Yong Qiu

DOI: https://doi.org/10.1021/la304581c

IF: 3.9

2012-01-01

Langmuir

Abstract:Films of zinc tin oxide (ZTO), grown from solutions with zinc acetate dehydrate and tin(II) 2-ethylhexanoate dissolved in 2-methoxyethanol, have been used to fabricate thin-film transistors in combination with solution-processed aluminum oxide as the gate insulator. And the nonhomogeneity of the single-layer ZTO films, caused by both ZTO film-substrate interaction and surface crystallization, has been studied, which is essential to achieve high performance transistors. In the bottom-contact thin-film transistor based on a Sn-rich layer of ZTO, a high mobility of 78.9 cm(2) V(-1) s(-1) in the saturation region has been obtained, with an on-to-off current ratio of 10(5) and a threshold gate voltage of 1.6 V.
P‐1.11: High‐mobility ZnO thin‐film transistors with HfO2/Al2O3 bilayer dielectric

Qi Li,Junchen Dong,Jingyi Wang,Dengqin Xu,Dedong Han,Yi Wang

DOI: https://doi.org/10.1002/sdtp.16037

2022-01-01

SID Symposium Digest of Technical Papers

Abstract:We investigate high‐performance ZnO thin‐film transistors (TFTs) with a HfO2/Al2O3 bilayer high‐κ gate dielectric. The effects of atomic layer deposition process temperature (80, 100, 120, and 140 °C) of Al2O3 dielectric layer on device performance of ZnO TFTs are examined. When the process temperature is at 100 °C, the devices show the best electrical properties, such as a field‐effect mobility of 34.12 cm2/Vs, a subthreshold swing of 105.70 mV/decade, and an on‐off current ratio over 108. Besides, of all the devices, TFTs with 100 °C‐Al2O3 show the best stability with 0.2 and –0.1 V threshold voltage shift under positive and negative gate‐bias stress, which may probably due to the high‐quality interface between the active layer and dielectric layer. This work presents great potential of the ZnO TFTs in applications of advanced displays.
High Performance Aluminum-Doped Zno Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature

Dedong Han,Jian Cai,Wei Wang,Liangliang Wang,Yi Wang,Lifeng Liu,Shengdong Zhang

DOI: https://doi.org/10.1166/sl.2013.2837

2012-01-01

Abstract:We report on the fabrication and characteristics of low-driven-voltage and high mobility thin film transistors (TFTs) using Aluminum-doped ZnO as an active channel layer grown by using radio frequency (rf) magnetron sputtering technique. The AZO-TFTs are fabricated on glass substrates at room temperature. The TFT device structure used in this study is a bottom gate type, which consists of high-K HfO2 film as the gate dielectric and indium tin oxide (ITO) as source and drain electrodes. The sputtering and post-annealing conditions of the gate insulators are optimized for leakage current and TFT performances. The device shows a low threshold voltage of 2.2 V, an high on/off ratio of 1.0 x 10(7), a high field effect mobility of 26.1 cm(2)N . s, a subthreshold swing of 0.25 V/decade, and the off current of less than 10(-12) A at a maximum device processing temperature of 180 degrees C. The AZO-TFTs is a very promising low-cost optoelectronic device for the next generation of invisible electronics due to transparency, high mobility, and low-temperature processing.

High-performance chemical-bath deposited CdS thin-film transistors with ZrO2 gate dielectric

Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application

Fully Printed Top-Gate Metal–Oxide Thin-Film Transistors Based on Scandium-Zirconium-Oxide Dielectric

High Performance Rf Sputtering Deposited Zno Thin-Film Transistors

Enhancement of electrical properties of solution-processed oxide thin film transistors using ZrO<sub>2</sub> gate dielectrics deposited by an oxygen-doped solution

Electrical Properties of Wide Bandgap ZnMgO and Fabrication of Transparent Thin Film Transistors

Study of zinc tin oxide thin-film transistor

Advancements in Metal Oxide Thin Film Quality in Solution-Processed High-κ Dielectrics for High-Performance Transistors

High-Performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

Reliability Study of Zinc Oxide Thin-Film Transistor with High-K Gate Dielectric

High-Performance Thin-Film Transistors with ZnO/Al2O3 Superlattice Channel Fabricated by Atomic Layer Deposition

Solution-Processed Zirconium Oxide Gate Insulators for Top Gate and Low Operating Voltage Thin-Film Transistor

Impact of ZrO 2 Dielectrics Thickness on Electrical Performance of TiO 2 Thin Film Transistors with Sub-2 V Operation

High-Performance Amorphous InGaZnO Thin Film Transistor With High-k Van Der Waals Molecular Dielectric

Titanium doped Zinc-oxide based Thin Film Transistors: Optimization of the source/drain materials

Research Progress of High Dielectric Constant Zirconia-Based Materials for Gate Dielectric Application

Feasibility of Atomic Layer Deposited AlZrOx Film to Achieve High Performance and Good Stability of ZnSnO-TFT

High-Performance Transistors Based on Zinc Tin Oxides by Single Spin-Coating Process

P‐1.11: High‐mobility ZnO thin‐film transistors with HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> bilayer dielectric

High Performance Aluminum-Doped Zno Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature