Abstract:Layered transition metal dichalcogenides (TMDs) and other two-dimensional (2D) materials are promising candidates for enhancing the capabilities of complementary metal-oxide-semiconductor (CMOS) technology. Field-effect transistors (FETs) made with 2D materials often exhibit mobilities below their theoretical limit, and strategies such as encapsulation with dielectrics grown by atomic layer deposition (ALD) have been explored to tune carrier concentration and improve mobility. While molecular adsorbates are known to dope 2D materials and influence charge scattering mechanisms, it is not well understood how ALD reactants affect 2D transistors during growth, motivating in situ or operando studies. Here, we report electrical characterization of MoS2 and MoTe2 FETs during ALD of MoOx. The field effect mobility improves significantly within the first five cycles of ALD growth using Mo(NMe2)4 as the metal-organic precursor and H2O as the oxidant. Analyses of the in situ transconductance at the growth temperature and ex situ variable temperature transconductance measurements indicate that the majority of the mobility enhancement observed at the beginning of dielectric growth is due to screening of charged impurity scattering by the adlayer. Control experiments show that exposure to only H2O or O2 induces more modest and reversible electronic changes in MoTe2 FETs, indicating that negligible oxidation of the TMD takes place during the ALD process. Due to the strong influence of the first <2 nm of deposition, when the dielectric adlayer may be discontinuous and still evolving in stoichiometry, this work highlights the need for further assessment of nucleation layers and initial deposition chemistry, which may be more important than the bulk composition of the oxide itself in optimizing performance and reproducibility.

Surface transfer doping of MoO3 on hydrogen terminated diamond with an Al2O3 interfacial layer

Surface Transfer Doping in MoO 3- x /Hydrogenated Diamond Heterostructure

Surface transfer doping of diamond using solution-processed molybdenum trioxide

MoO3 Induces P-Type Surface Conductivity by Surface Transfer Doping in Diamond

High-electron-affinity Oxide V2O5 Enhances Surface Transfer Doping on Hydrogen-Terminated Diamond

A DFT Study of the Surface Charge Transfer Doping of Diamond by Chromium Trioxide

Strong spin-orbit interaction induced by transition metal oxides at the surface of hydrogen-terminated diamond

Interfacial energy barrier height of Al$_2$O$_3$/H-terminated (111) diamond heterointerface investigated by X-ray photoelectron spectroscopy

Diamond Field Effect Transistors with MoO 3 Gate Dielectric

Atomic-Layer-Deposited H:MoO x Function Layer as Efficient Hole Selective Passivating Contact in Silicon Solar Cells

Aluminum Oxide Passivating Tunneling Interlayers for Molybdenum Oxide Hole-Selective Contacts

Research on the Hydrogen Terminated Single Crystal Diamond MOSFET with MoO 3 Dielectric and Gold Gate Metal

HfAlOx/Al2O3 Bilayer Dielectrics for a Field Effect Transistor on a Hydrogen-Terminated Diamond

Transport Properties of the Two-Dimensional Hole Gas for H-Terminated Diamond with an Al<sub>2</sub>O<sub>3</sub> Passivation Layer

Surface and Interfacial Study of Atomic Layer Deposited Al2O3 on MoTe2 and WTe2

Adhesion, bonding and mechanical properties of Mo doped diamond/Al (Cu) interfaces: A first principles study

Normally-off hydrogen-terminated diamond field effect transistor with a bilayer dielectric of Er2O3/Al2O3

Diamond Field Effect Transistors Using Bilayer Dielectrics Yb2TiO5/Al2O3 on Hydrogen-Terminated Diamond

Surface Transfer Doping of Cubic Boron Nitride Films by MoO3 and Tetrafluoro-tetracyanoquinodimethane (F4-TCNQ)

In situ transport measurements reveal source of mobility enhancement of MoS2 and MoTe2 during dielectric deposition

Hydrogen-terminated diamond field-effect transistor with a bilayer dielectric of HfSiO4/Al2O3