Abstract:The combined effect of P-doping and surface-termination on the energetics, and especially the electronic structure, of a diamond (100) surface, has in the present study been investigated by using a Density Functional Theory method. The diamond surface was terminated with any of the following species: H, F, OH, Obridge and NH2 . These adsorbates have earlier experimentally been proven crucial for e.g. applications based on surface electrochemistry. The observed results were analysed with the purpose to obtain a deeper knowledge about the atomic-level cause to the observed effects by the P doping and surface termination. The P dopant was found to have a very minor influence on the averaged adsorption energy for the various terminating species (i.e. with less than 0.17 eV). Moreover, the adsorbates were found to reduce the stability of the P-dopant in the diamond lattice. When analysing the results of the calculated partial density of states, the P dopant was found to contribute with band gap states below the conduction band, out of which one is a donor band. In addition, the surfaces with their terminating species will contribute with empty band gap states just below the CBM of the diamond surfaces. Hence, the combination of P doping and surface termination will induce both donor and acceptor states in the diamond surface band gap, which will improve the usefulness of these specific diamond surfaces in various electronic devices. The work function of a diamond surface is one specific properties that will be affected by substitutional doping and surface termination. Within the present study, the terminating species were found to render a strong impact on the surface work function (as compared to a non-terminated diamond (100)-2x1 surface), with calculated work function values that were even further decreased by P-doping.

Surface Transfer Doping in MoO 3- x /Hydrogenated Diamond Heterostructure

Surface transfer doping of diamond using solution-processed molybdenum trioxide

Surface transfer doping of MoO3 on hydrogen terminated diamond with an Al2O3 interfacial layer

High-electron-affinity Oxide V2O5 Enhances Surface Transfer Doping on Hydrogen-Terminated Diamond

MoO3 Induces P-Type Surface Conductivity by Surface Transfer Doping in Diamond

A DFT Study of the Surface Charge Transfer Doping of Diamond by Chromium Trioxide

Strong spin-orbit interaction induced by transition metal oxides at the surface of hydrogen-terminated diamond

Predicted superior hydrogen evolution activities of MoC via surface dopant

Surface Transfer Doping of Cubic Boron Nitride Films by MoO3 and Tetrafluoro-tetracyanoquinodimethane (F4-TCNQ)

Surface transfer doping of hydrogen-terminated diamond probed by shallow nitrogen-vacancy centers

Diamond Field Effect Transistors with MoO 3 Gate Dielectric

A Theoretical Study on Dopants Substituted on the H-terminated Surface Regulating the Threshold Concentration of Nitrogen for Accelerating Diamond Growth

Enhancing Surface Activity in MoTe2 Monolayers through P-Block Doping: A Comprehensive DFT Investigation

Enhancing surface activity in MoTe 2 monolayers through p-block doping: A comprehensive DFT investigation

Understanding Iron-Doping Modulating Domain Orientation and Improving the Device Performance of Monolayer Molybdenum Disulfide

Ab initio investigation of the effects of B-doping on the adsorption of H2O, H2 and O2 molecules at diamond surfaces

Metallic Transport in Monolayer and Multilayer Molybdenum Disulfides by Molecular Surface Charge Transfer Doping

Research on the Hydrogen Terminated Single Crystal Diamond MOSFET with MoO 3 Dielectric and Gold Gate Metal

Use of a High Electron-Affinity Molybdenum Dithiolene Complex to P-Dope Hole-Transport Layers

First-principles Study of Oxygenated Diamond (001) Surfaces with and Without Hydrogen

A Theoretical Study of the Energetic Stability and Electronic Structure of Terminated and P-Doped Diamond (100)-2x1 Surfaces